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您的检索式：作者名="Moumita Mukherjee"
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| 1 | Si/Si C-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis显示文摘A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal Si C-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/Si C-based hetero-structure devices. Under small-voltage modulation( 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance(5 106S/m2/,susceptance(10.4 107S/m2/, average breakdown voltage(207.6 V), and power generating efficiency(15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude(50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal(> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and Si C. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/Si C-based IMPATT for possible application in high-power MM-wave communication systems. | Moumita Mukherjee P.R.Tripathy S.P.Pati | 2015 | Journal of Semiconductors2015，36，6： | 3 |
| 2 | Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power显示文摘Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique,developed by the authors,for operation in the Ka-,V- and W-band frequencies.The results are further compared with corresponding Si and Ge homo-junction devices.The study shows high values of device efficiency,such as 23%, 22%and 21.5%,for n-Ge/p-Si IMPATTs at the Ka,V and W bands,respectively.The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7×10~6 S/m^2 and 71.3×10~6 S/m^2, which are~3-4 times better than their Si and Ge counterparts at the V-band.The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0×10~9,1.1×10~9 and 1.4×10~9 W/m^2,respectively,for Ka-,V- and W-band operation,which can be observed to be the highest when compared with Si,Ge and n-Si/p-Ge devices.Both of the hetero-junctions,especially the n-Ge/p-Si hetero-junction diode,can thus become a superior RF-power generator over a wide range of frequencies.The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena. | Moumita Mukherjee Pravash R.Tripathy S.P.Pati | 2011 | Journal of Semiconductors2011，32，11： | 0 |
| 3 | Prospects of a β-SiC based IMPATT oscillator for application in THz communication and growth of aβ-SiC p-n junction on a Ge modified Si〈100〉substrate to realize THz IMPATTs显示文摘The prospects of a p^+nn^+ cubic silicon carbide(3C-SiC/β-SiC) based IMPATT diode as a potential solid-state terahertz source is studied for the first time through a modified generalized simulation scheme.The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device.Based on the simulation results,an attempt has been made to fabricateβ-SiC based IMPATT devices in the THz region.Single crystalline,epitaxial 3C-SiC films are deposited on silicon(Si)(100) substrates by rapid thermal chemical vapour deposition(RTPCVD) at a temperature as low as 800℃using a single precursor methylsilane,which contains Si and C atoms in the same molecule.No initial surface carbonization step is required in this method.A p-n junction with an n-type doping concentration of 4×10^(24) m^(-3)(which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper.It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness. | Moumita Mukherjee Nilratan Mazumder | 2010 | Journal of Semiconductors2010，31，12： | 0 |
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