Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

查看全文 作　　者：Moumita [1]Mukherjee;Pravash [2]R.Tripathy;[3]S.P.Pati 机构地区：[1]Centre of Millimeter-Wave Semiconductor Devices and Systems,Institute of Radio Physics and Electronics,University of Calcutta;[2]Puroshottam Institute of Engineering & Technology,Rourkela,Odisha,India,Sambalpur University;[3]AICTE Emeritus Professor,NIST,Pelur Hills,Berhampur,Odisha,India 出　　处：《Journal of Semiconductors》索引2011年第32卷第11期,共7页 摘　　要：Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique,developed by the authors,for operation in the Ka-,V- and W-band frequencies.The results are further compared with corresponding Si and Ge homo-junction devices.The study shows high values of device efficiency,such as 23%, 22%and 21.5%,for n-Ge/p-Si IMPATTs at the Ka,V and W bands,respectively.The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7×10~6 S/m^2 and 71.3×10~6 S/m^2, which are~3-4 times better than their Si and Ge counterparts at the V-band.The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0×10~9,1.1×10~9 and 1.4×10~9 W/m^2,respectively,for Ka-,V- and W-band operation,which can be observed to be the highest when compared with Si,Ge and n-Si/p-Ge devices.Both of the hetero-junctions,especially the n-Ge/p-Si hetero-junction diode,can thus become a superior RF-power generator over a wide range of frequencies.The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena. 关 键 词：异质结器件 设备效率 HOMO 锗/硅 硅/锗 不对称 异质结二极管 计算机模拟技术