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您的检索式：作者名="M.Willander"
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| 1 | Comparative Analysis of Ti,Ni,and Au Electrodes on Characteristics of TiO_2 Nanofibers for Humidity Sensor Application显示文摘The effect of metal(Ti,Ni,and Au) electrodes on humidity sensing properties of electrospun TiO_2 nanofibers was investigated in this work.The devices were fabricated by evaporating metal contacts on SiO_2 layer thermally grown on silicon substrate.The separation between the electrodes was 90μm for all sensors.The sensors were tested from 40%to 90%relative humidity(RH) by AC electrical characterization at room temperature. When sensors are switched between 40%and 90%RH,the corresponding response and recovery time are 3 s and 5 s for Ti-electrode sensor,4 s and 7 s for Ni-electrode sensor,and 7 s and 13 s for Au-electrode sensor.The hysteresis was 3%,5%and 15%for Ti-,Ni-,and Au-electrode sensor,respectively.The sensitivity of Ti,Ni,and Au-electrode sensors are 7.53 MΩ/%RH,5.29 MΩ/%RH and 4.01 MΩ/%RH respectively at 100 Hz.Therefore Ti-electrode sensor is found to have linear response,fast response and recovery time and higher sensitivity as compared with those of Ni- and Au-electrode sensors.Comparison of humidity sensing properties of sensors with different electrode material may propose a compelling route for designing and optimizing humidity sensors. | S.S.Batool Z.Imran M.Israr Qadir M.Usman H.Jamil M.A Rafiq M.M.Hassan M.Willander | 2013 | Journal of Materials Science & Technology2013，29，5： | 3 |
| 2 | Zinc oxide nanorod based photonic devices:recent progress in growth,light emitting diodes and lasers显示文摘 | M.Willander O.Nur Q.X.Zhao L.L.Yang M.Lorenz | | 0，，3320： | 1 |
| 3 | Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy显示文摘We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy(MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current–voltage(I–V)measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49±0.03 eV and capture cross-section of 8.57×10-18cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy(SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen–zinc vacancy complex in ZnO. | M.Asghar K.Mahmood M.A.Hasan I.T.Ferguson R.Tsu M.Willander | 2014 | Chinese Physics B2014，23，9： | 0 |
| 4 | V形GaAs/AlGaAs量子线结构的微区光致发光谱研究显示文摘在室温下用显微光致发光的方法对单根V形GaAs/AlGaAs量子线进行了沿垂直于量子线方向的空间分辨扫描测试 ,观察到各种量子结构的光致发光谱随空间位置的变化 .在量子线区域附近观察到来自量子线 (QWR)、颈部量子阱 (NQWL)和垂直量子阱 (VQWL)等各种结构的发光 ,而在距离量子线约 1μm以远的发光光谱表现出侧面量子阱 (SQWL)的发光 .对全部发光光谱用高斯线形进行了拟合 ,发现QWR和SQWL的发光包含了两个荧光峰 ,将它们分别归诸为电子到轻、重空穴的跃迁 .拟合后发光强度的空间变化直接确定了与量子线结构相关的发光起源 ,并且反映出由于载流子由SQWL迁移进入QWR造成SQWL发光峰的淬灭 . | 李志锋 陆卫 刘兴权 沈学础 Y.FU M.WILLANDER H.H.TAN C.JAGADISH | 2000 | 物理学报2000，49，9： | 0 |
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