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您的检索式：作者名="Linbao Guo"
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| 1 | Highly efficient solution-processed CZTSSe solar cells based on a convenient sodium-incorporated post-treatment method显示文摘In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl solution.In subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)3phase.SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers.Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states.As high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment.This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells. | Biwen Duan Linbao Guo Qing Yu Jiangjian Shi Huijue Wu Yanhong Luo Dongmei Li Sixin Wu Zhi Zheng Qingbo Meng | 2020 | Journal of Energy Chemistry2020，29，1： | 8 |
| 2 | Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current显示文摘An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior,making it potentially suited to meet the need for a near-infrared pure Si photodetector.In this work,the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance.By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate,we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10^(−7) A/cm^(2) at−1 V and a high rectification ratio of 1.5×10^(8) at±1 V.Furthermore,the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness.Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication. | Xinxin Li Zhen Deng Jun Li Yangfeng Li Linbao Guo Yang Jiang Ziguang Ma Lu Wang Chunhua Du Ying Wang Qingbo Meng Haiqiang Jia Wenxin Wang Wuming Liu Hong Chen | 2020 | Photonics Research2020，8，11： | 4 |
| 3 | Grey forecasting model for CO2 emissions 显示文摘 | GUO Linbao | 2012 | Advanced Materials Research2012，，： | 1 |
| 4 | Actively controllable terahertz switches with graphene-based nongroove gratings显示文摘We systematically investigated the tunable dynamic characteristics of a broadband surface plasmon polariton(SPP) wave on a silicon-graded grating structure in the range of 10–40 THz with the aid of single-layer graphene.The theoretical and numerical simulated results demonstrate that the SPPs at different frequencies within a broadband range can be trapped at different positions on the graphene surface, which can be used as a broadband spectrometer and optical switch. Meanwhile, the group velocity of the SPPs can be modulated to be several hundred times smaller than light velocity in vacuum. Based on the theoretical analyses, we have predicted the trapping positions and corresponding group velocities of the SPP waves with different frequencies. By appropriately tuning the gate voltages, the trapped SPP waves can be released to propagate along the surface of graphene or out of the graded grating zone. Thus, we have also investigated the switching characteristics of the slow light system, where the optical switching can be controlled as an 'off' or 'on' mode by actively adjusting the gate voltage. The slow light system offers advantages, including broadband operation, ultracompact footprint, and tunable ability simultaneously, which holds great promise for applications in optical switches. | LINBAO LUO KUIYUAN WANG CAIWANG GE KAI GUO FEI SHEN ZHIPING YIN ZHONGYI GUO | 2017 | Photonics Research2017，5，6： | 0 |
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