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		题名	作者	年代	出处	被引量
	1	Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon显示文摘We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.	MENGYA LIAO SIMING CHEN ZHIXIN LIU YI WANG LALITHA PONNAMPALAM ZICHUAN ZHOU JIANG WU MINGCHU TANG SAMUEL SHUTTS ZIZHUO LIU PETER M.SMOWTON SIYUAN YU ALWYN SEEDS HUIYUN LIU	2018	Photonics Research2018，，11：	7

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