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17篇 您的检索式：作者名="Ielmini D"

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		题名	作者	年代	出处	被引量
	1	Filament conduction and reset mechanism in NiO-based resistive-switching memory(RRAM)devices显示文摘	Russo U Ielmini D Cagli C	2009	IEEE Transactions Electron Devices2009，56，2：	1
	2	Threshold-Switching Delay Controlled by 1/f Current Fluctuations in Phase Change Memory Devices 显示文摘	Lavizzari S Sharma D Ielmini D	2010	IEEE Electron Devices Society2010，57，5：	1
	3	Analysis of phase distribution in phase-change nonvolatile memories显示文摘	Ielmini D Lacaita A L Pirovano A	2004	IEEE Electron Device Lett2004，25，7：	1
	4	Modeling of tunneling P/E for nanocrystal memories显示文摘	COMPAGNONI C M IELMINI D SPINELLI A S	2005	IEEE Trans Electron Devices2005，52，4：	1
	5	Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory devices 显示文摘	RUSSO U IELMINI D CAGLI C	2009	IEEE Electron Devices2009，56，2：	1
	6	Intrinsic data retention innanoscaled phase-change memories-Part I: monte carlo model forcrystallization and percolation 显示文摘	RUSSO U IELMINI D REDAELLI A	2006	Electron Devices IEEE Trans2006，53，12：	1
	7	Evidence for voltage-driv- en set/reset processes in bipolar switching RRAM 显示文摘	IELMINI D NARDI F BALATTI S	2012	IEEE Transactions on Electron Devices2012，59，8：	1
	8	Filament con- duction and reset mechanism in NiO-based resistive- switching memory (RRAM) devices 显示文摘	RUSSO U IELMINI D CAGLI C	2009	IEEE Transac- tions on Electron Devices2009，56，2：	1
	9	Self-accelerated ther- mal dissolution model for reset programming in unipolar resis- tive-switching memory (RRAM) devices 显示文摘	RUSSO U IELMINI D CAGLI C	2009	IEEE Transac- tions on Electron Devices2009，56，2：	1
	10	Parasitic reset in the programming transient of PCMs显示文摘	Ielmini D Mantegazza D Lacaita A L	2005	IEEE Electron Device Letters2005，26，11：	1
	11	Switching and programming dynamics in phase - change memory cells显示文摘	Ielmini D Mantegazza D Lacaita A L	2005	Solid-State Electronics2005，49，：	1
	12	Phase change materials and their application to nonvolatile memories显示文摘	Raoux S Wenic W Ielmini D	2010	Chemical Reviews2010，110，1：	1
	13	Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices 显示文摘	IELMINI D ZHANG Y	2007	Appl Phys2007，102，5：	1
	14	Physical Models of Size-Dependent Nanofilament Formation and Rupture in NiO Resistive Switching Memories显示文摘	Ielmini D Nardi F Cagli C	2011	Nanotechnology2011，22，25：	1
	15	Physical models of sizedependentnanofilament formation and rupture in NiOresistive switching memories显示文摘	Ielmini D Nardi F Cagli C	2011	Nanotechnology2011，22，25：	1
	16	Evidence for trap -limited transport in the subthreshold conduction regime of chalcogenide glas ses 显示文摘	Ielmini D Zhang Y	2007	Applied Physics Letters2007，90，19：	1
	17	Filament conduction and reset mechanism in NiO-based resistive- switching memory (RRAM) devices 显示文摘	Russo U Ielmini D Cagli C	2009	IEEE Transactions on Electron Devices2009，562，：	1

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