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		题名	作者	年代	出处	被引量
	1	Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing显示文摘Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions.We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures,revealing high Q-factors of 1250±90 corresponding to end-facet reflectivities of R=0.73±0.02.By using optimised direct-indirect band alignment in the active region,we demonstrate a well-refilling mechanism providing a quasifour-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds(~6μJ cm^(−2) pulse−1)for Ⅲ-Ⅴ nanowire lasers.Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.	Stefan Skalsky Yunyan Zhang Juan Arturo Alanis HAruni Fonseka Ana M.Sanchez Huiyun Liu Patrick Parkinson	2020	Light(Science & Applications)2020，9，1：	0

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