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您的检索式：作者名="Ana M.Sanchez"
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| 1 | Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing显示文摘Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions.We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures,revealing high Q-factors of 1250±90 corresponding to end-facet reflectivities of R=0.73±0.02.By using optimised direct-indirect band alignment in the active region,we demonstrate a well-refilling mechanism providing a quasifour-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds(~6μJ cm^(−2) pulse−1)for Ⅲ-Ⅴ nanowire lasers.Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements. | Stefan Skalsky Yunyan Zhang Juan Arturo Alanis HAruni Fonseka Ana M.Sanchez Huiyun Liu Patrick Parkinson | 2020 | Light(Science & Applications)2020，9，1： | 0 |
| 2 | High yield production of ultrathin fibroid semiconducting nanowire of Ta2Pd3Se8显示文摘Immediately after the demonstration of the high-quality electronic properties in various two dimensional(2D)van der Waals(vdW)crystals fabricated with mechanical exfoliation,many methods have been reported to explore and control large scale fabrications.Comparing with recent advancements in fabricating 2D atomic layered crystals,large scale production of one dimensional(1D)nanowires with thickness approaching molecular or atomic level still remains stagnant.Here,we demonstrate the high yield production of a 1D vdW material,semiconducting Ta2Pd3Se8 nanowires,by means of liquid-phase exfoliation.The thinnest nanowire we have readily achieved is around 1 nm,corresponding to a bundle of one or two molecular ribbons.Transmission electron microscopy(TEM)and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability.Our low-frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings.The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors. | Xue Liu Sheng Liu Liubov Yu.Antipina Yibo Zhu Jinliang Ning Jinyu Liu Chunlei Yue Abin Joshy Yu Zhu Jianwei Sun Ana M.Sanchez Pavel B.Sorokin Zhiqiang Mao Qihua Xiong Jiang Wei | 2020 | Nano Research2020，13，6： | 0 |
| 3 | Multiple radial phosphorus segregations in GaAsP core-shell nanowires显示文摘Highly faceted geometries such as nanowires are prone toform self-formed features,especially those that are driven by segregation.Understanding these features is important in preventing their formation,understanding their effects on nanowire properties,or engineering them for applications.Single elemental segregation lines that run along the radii of the hexagonal cross-section have been a common observation in alloy semiconductor nanowires.Here,in GaAsP nanowires,two additional P rich bands are formed on either side of the primary band,resulting in a total of three segregation bands in the vicinity of three of the alternating radii.These bands are less intense than the primary band and their formation can be attributed to the inclined nanofacets that form in the vicinity of the vertices.The formation of the secondary bands requires a higher composition of P in the shell,and to be grown under conditions that increase the diffusivity difference between As and P.Furthermore,it is observed that the primary band can split into two narrow and parallel bands.This can take place in all six radii,making the cross sections to have up to a maximum of 18 radial segregation bands.With controlled growth,these features could be exploited to assemble multiple different quantum structures in a new dimension(circumferential direction)within nanowires. | H.Aruni Fonseka Yunyan Zhang James A.Gott Richard Beanland Huiyun Liu Ana M.Sanchez | 2021 | Nano Research2021，14，1： | 0 |
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