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    题名 作者 年代 出处 被引量
1Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells显示文摘CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.HE XuLin,ZHANG JingQuan,FENG LiangHuan,WU LiLi,LI Wei,ZENG GuangGen,LEI Zhi,LI Bing & ZHENG JiaGui College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China 2010Science China(Technological Sciences)2010,53,9:4
2Study on the Effect of Two-Dimensional Helicopter V-buoy’s Way of Water Entry on Water Impact显示文摘To analyze the effect of the way of water entry on water impact, the FLUENT software was adopted to simulate a two-dimensional (2D) helicopter V-buoy’s free fall and forced fall at a constant velocity.Combining with the UDF program and the dynamic mesh model, the standard k-ε turbulence model was used and the VOF technique was adopted to capture free surface.The physical parameters such as velocity and force were calculated and compared with those results of boundary element method with good agreement obtained.It was found that the force of 2D V-buoy at a constant velocity was much greater than that in free fall motion.Meanwhile, the maximum pressure coefficients C p max in both cases were almost equal and the dimensionless water-entry depths y' corresponding to C p max were also similar.Qingtong Chen Guanggen Yang 2019Journal of Harbin Institute of Technology(New Series)2019,26,3:2
3显示文摘Zeng Guanggen Li Bing Zheng Jiagui 2008Journal of Function Materals and Devices2008,4,3:1
4Atrial extracellular matrix remodeling and the maintenance of atrial fibrillation 显示文摘Xu Jun Cui Guanggen Esmailian F 2004Circulation2004,109,3:1
5Effects of different CdCl_2 annealing methods on the performance of CdS/Cd Te polycrystalline thin film solar cells显示文摘In this paper, the effects of different Cd Cl2 annealing methods, including vapor annealing and dip-coating annealing, on the performance of Cd S/Cd Te polycrystalline thin-film solar cells are studied. After annealing, the samples are lightly etched with 1% bromine in methanol to remove surface oxides. Both annealing methods give Cd Te polycrystalline thin films with good crystallinity and complete structure. For solar cells containing the annealed Cd Te films, cell efficiency first increases and then decreases as the concentration of Cd Cl2 solution used for dip-coating annealing increases, and the optimized Cd Cl2 concentration is 12%. The uniformity of the performance of all cells is analyzed by calculating the relative standard deviation for each parameter. The uniformity of cell performance can be improved dramatically by dip-coating annealing instead of vapor annealing. Most notably, an appropriate concentration of Cd Cl2(12%) acts as a protective layer that is conducive to realizing uniform high-performance Cd S/Cd Te solar cells. According to the location of depletion regions, the Cd Te films treated by dip-coating annealing show a relatively low doping concentration, except for the sample treated with a Cd Cl2 concentration of 6%, which is consistent with the changes of short-circuit current density of the cells. It is believed that these results can be applied to the large-scale production of Cd Te polycrystalline thin-film solar cells.ZENG GuangGen ZHANG JingQuan LI Bing LI Wei WU LiLi WANG WenWu FENG LiangHuan 2015Science China(Technological Sciences)2015,58,5:1
6Atrial extracellular matrix remodeling and the maintance of AF 显示文摘Jun Xu Guanggen Cui Fardad Esmailian 2004Circulation2004,109,2:1
7Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering显示文摘In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.ZHANG Xing ZHANG Jingquan WANG Bo WANG Shenghao FENG Lianghuan CAI Yaping WU Lili LI Wei LEI Zhi LI Bing ZENG Guanggen 2010Semiconductor Photonics and Technology2010,16,1:1
8Titanium effect on the thermoluminescence and optically stimulated luminescence of Ti ,Mg:a-A1203 transparent ceramics 显示文摘Liu Qiang Yang Qiuhong Zhao Guanggen 2014Journal of Alloys and Compounds2014,582,:1
9Atrial Extracellular Matrix Remodeling and the Maintenance of Atrial Fibrillation显示文摘Jun Xu Guanggen Cui Fardad Esmailian Mark Plunkett Daniel Marelli Abbas Ardehali Jonah Odim Hillel Laks Luyi Sen 2004Circulation: Journal of the American Heart Association2004,,3:1
10Biotransfer of persistent organic pollutants from a large site in China used for the disassembly of electronic and electrical waste显示文摘Gaofeng Zhao Ying Xu Guanggen Han Bo Ling 2006Environmental Geochemistry and Health2006,,4:1
11Study on AlSb Polycrystalline Films Prepared by Magnetron Sputtering显示文摘AlSb polycrystalline thin films were prepared by magnetron sputtering with an improved geometric target, and their structural,electrical and optical properties were studied. The results of XRD measurements suggest that the annealed AlSb thin films are Zinc-blende structure with the average size of about 23~31 nm, and the higher temperature promotes the crystallization of the films. The morphology obtained from the AFM measurements reveals that the surfaces of the films are smooth and the particles are uniform with the average size of about 50 nm. Hall Effect measurements show that AlSb films are p-type semiconductors and the test of temperature dependence of dark conductivity in vacuum indicates the conductivity activation energys are 0.05 eV at low temperature and 0.13 eV at a higher temperature. The optical bandgap for a typical AlSb film is 1.52eV, which is indicated from the optical absorption measurements.XU Fu WU Lili FENG Lianghuan ZHANG Jingquan LI Wei LI Bing LEI Zhi ZENG Guanggen 2010Semiconductor Photonics and Technology2010,16,1:0
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