维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

1篇 您的检索式：作者名="Gerald Leake"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Electrically pumped quantum-dot lasersgrownon 300 mm patterned Si photonic wafers显示文摘Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources.Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy ofⅡ-Ⅴdevices on Si at elevated temperatures.Yet,thick,defect management epi designs prevent vertical light coupling from the gain region to the Si-on-lnsulator waveguides.Here,we demonstrate the frst electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned(001)Si wafer with a buttcoupled configuration.Unique growth and fabrication challenges imposed by the template architecture have been resolved,contributing to continuous wave lasing to 60℃and a maximum double-side output power of 126.6 mW at 20℃with a double-side wall-plug efficiency of 8.6%.The potential for robust on-chip laser operation and effcient lowloss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.	Chen Shang Kaiyin Feng Eamonn THughes Andrew Clark Mukul Debnath Rosalyn Koscica Gerald Leake Joshua Herman David Harame Peter Ludewig Yating Wan John E.Bowers	2022	Light(Science & Applications)2022，11，11：	1

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费