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9篇 您的检索式:作者名="Gabouze"
    题名 作者 年代 出处 被引量
1Morphological, structural and optical properties of thin SiC layer growth onto silicon by pulsed laser deposition显示文摘A. Keffous K. Bourenane M. Kechouane N. Gabouze T. Kerdja 2006Vacuum2006,,5:1
2Electrodeposition of NiFe films on Si (100) substrate 显示文摘SAM S FORTAS G GUITTOUM A GABOUZE N DJEBBAR S 2007Surface Science2007,601,18:1
3Long- time stabilization of porous silicon photoluminescence by surface modification 显示文摘Mahmoudi B Gabouze N Guerbous L 2007Journal of Lumines- cence2007,127,2:1
4显示文摘Hadjersi T Gabouze N Yamamoto N 2005Vacuum2005,80,4:1
5Metal-assisted chemical etching of multicrystalline silicon in HF/ Na2S208 produces porous silicon 显示文摘HADJERSI T GABOUZE N ABABOU A 2005Mater Sci Forum2005,480,:1
6Blue luminescence from porous layers produced by metal-assisted chemical etching on low-doped silicon显示文摘HADJERSI T GABOUZE N YAMAMOTO N 2005Vacuum2005,80,:1
7Blue Luminescence from Porous Layers Produced by Metal-assisted Chemical Etching on Low-doped Silicon显示文摘Hadjersi T Gabouze N Yamamoto N 2005Vacuum2005,80,4:1
8Photoluminescence from photochemically etched highly resistive silicon显示文摘HADJERSI T GABOUZE N YAMAMOTO N 2004Thin Solid Films2004,459,:1
9Photoresponse and H_2 gas sensing properties of highly oriented Al and Al/Sb doped ZnO thin films显示文摘ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage characterizations.It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate,a high reflectivity in the infrared region and a response to illumination.Furthermore,it has been found that Si/(ZnO:Al/Sb)/Al photodiode is promising in photoconduction device while Si/(ZnO:Al)/Al can be used as gas sensor responding to the low H_2concentrations.Hannane Benelmadjat Boubekeur Boudine Aissa Keffous Noureddine Gabouze 2013Progress in Natural Science:Materials International2013,23,6:0
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