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		题名	作者	年代	出处	被引量
	1	Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature显示文摘We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.	J.Pradhan S.R.Pattanaik S.K.Swain G.N.Dash	2014	Journal of Semiconductors2014，35，3：	3
	2	Characterization of electrical properties of AlGaN/GaN interface using coupled Schrodinger and Poisson equation显示文摘The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas(2-DEG) density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET(modulation doped field effect transistor) for optimum DC and RF characteristics.	S.Das A.K.Panda G.N.Dash	2012	Journal of Semiconductors2012，33，11：	0
	3	RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT显示文摘A new depletion-mode gate recessed AlGaN/InGaN/GaN-high electron mobility transistor(HEMT)with 10 nm thickness of InGaN-channel is proposed.A growth of AlGaN over GaN leads to the formation of twodimensional electron gas(2DEG)at the heterointerface.High 2DEG density(ns)is achieved at the heterointerface due to a strain induced piezoelectric effect between AlGaN and GaN layers.The electrons are confined in the InGaN-channel without spilling over into the buffer layer,which also reduces the buffer leakage current.From the input transfer characteristics the threshold voltage is obtained as 4:5 V and the device conducts a current of 2 A/mm at a drain voltage of 10 V.The device also shows a maximum output current density of 1.8 A/mm at Vds of 3 V.The microwave characteristics like transconductance,cut-off frequency,max frequency of oscillation and Mason’s Unilateral Gain of the device are studied by AC small-signal analysis using a two-port network.The stability and power performance of the device are analyzed by the Smith chart and polar plots respectively.To our knowledge this proposed InGaN-channel HEMT structure is the first of its kind.	T.R.Lenka G.N.Dash A.K.Panda	2013	Journal of Semiconductors2013，34，11：	0

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