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6篇 您的检索式：作者名="A.K.Panda"

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		题名	作者	年代	出处	被引量
	1	为新生雏鸡提供早期营养可促进生长和加速消化道发育显示文摘对新生雏鸡及早喂料具有激活其生长动力的重要作用。这不仅能加快新生雏鸡对体内残留卵黄的利用速度,而且可加快增重并促进胃肠道的发育。	A.K.Panda 章君(译) 周振兴(校)	2006	国外畜牧学(猪与禽)2006，，6：	5
	2	粟谷在家禽日粮中的应用显示文摘在配制家禽饲料时并不总是有玉米可供应用,或只能以高价购买玉米。这就向人们提出了一个问题,能否用人类不常食用的粟米替代玉米作为家禽日粮的能量饲料?	潘雪男(译) 覃矜(校) S. V. Rama M.V.L.N.Raju A.K.Panda	2006	国外畜牧学(猪与禽)2006，，4：	1
	3	通过早期营养促进雏鸡免疫系统的发育显示文摘研究表明,雏鸡出壳后立即进食会更健康,且在其一生中会有一个良好的开端。	罗何峰 A.K.Panda M.R.Reddy	2007	国外畜牧学(猪与禽)2007，，6：	0
	4	Characterization of electrical properties of AlGaN/GaN interface using coupled Schrodinger and Poisson equation显示文摘The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas(2-DEG) density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET(modulation doped field effect transistor) for optimum DC and RF characteristics.	S.Das A.K.Panda G.N.Dash	2012	Journal of Semiconductors2012，33，11：	0
	5	GaN based transfer electron and avalanche transit time devices显示文摘A new model is developed to study the microwave/mm wave characteristics of two-terminal GaNbased transfer electron devices(TEDs),namely a Gunn diode and an impact avalanche transit time(IMPATT) device.Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band(140 GHz center frequency) to see the potentiality of each device under the same operating conditions.It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.	R.K.Parida A.K.Panda	2012	Journal of Semiconductors2012，33，5：	0
	6	RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT显示文摘A new depletion-mode gate recessed AlGaN/InGaN/GaN-high electron mobility transistor(HEMT)with 10 nm thickness of InGaN-channel is proposed.A growth of AlGaN over GaN leads to the formation of twodimensional electron gas(2DEG)at the heterointerface.High 2DEG density(ns)is achieved at the heterointerface due to a strain induced piezoelectric effect between AlGaN and GaN layers.The electrons are confined in the InGaN-channel without spilling over into the buffer layer,which also reduces the buffer leakage current.From the input transfer characteristics the threshold voltage is obtained as 4:5 V and the device conducts a current of 2 A/mm at a drain voltage of 10 V.The device also shows a maximum output current density of 1.8 A/mm at Vds of 3 V.The microwave characteristics like transconductance,cut-off frequency,max frequency of oscillation and Mason’s Unilateral Gain of the device are studied by AC small-signal analysis using a two-port network.The stability and power performance of the device are analyzed by the Smith chart and polar plots respectively.To our knowledge this proposed InGaN-channel HEMT structure is the first of its kind.	T.R.Lenka G.N.Dash A.K.Panda	2013	Journal of Semiconductors2013，34，11：	0

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