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45篇 您的检索式：作者名="FALSTER R"

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	题名	作者	年代	出处	被引量
1	Nucleation of oxide precipitates in vacancy-containing silicon, 显示文摘	VORONKOV V V FALSTER R	2002	J Appl Phys2002，91，9：	1
2	Effect of vacancies on nucleation of oxide precipitates in silicon 显示文摘	VORONKOV V V FALSTER R	2002	Mater Sci Semicond Processing2002，5，45：	1
3	On the properties of the intrinsic point defects in silicon A perspective from crystal growth and wafer processing 显示文摘	FALSTER R VORONKOV V V QUAST F	2000	Phys Stat Sol B2000，222，1：	1
4	The engineering of intrinsic point defects in silicon wafer and crystals 显示文摘	FALSTER R VORONKOV V V	2000	Mater Sci and Engineer2000，，：	1
5	Small-seeded species produce more seeds per square metre of canopy peryear, but not per individual per life time 显示文摘	Moles A T Falster D S Leishman M R etal	2004	Journal of Eeol ogy2004，92，3：	1
6	Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon 显示文摘	Voronkov V V Falster R	1999	Crystal Growth1999，204，：	1
7	Vacancy-type Microdefect Formation in Czochralski Silicon显示文摘	Voronkov V V Falster R	1998	Journal of Crystal Growth1998，194，1：	1
8	Grown in microdefect, residual vacies and oxygen precipitation bands in Czochralski silicon 显示文摘	Voronkov V V Falster R	1999	Crystal Growth1999，204，：	1
9	Quantification of Defect Dynamics in Unsteady-State and Steady-State Czochralski Growth of Monocrystalline Silicon 显示文摘	Kulkarni M S Vomnkov V V Falster R	2004	Journal of The Electrochemical Society2004，151，10：	1
10	Light-induced boron-oxygen recombina- tion centres in silicon: Understanding their formation and elimination 显示文摘	Voronkov V V Falster R	2014	Solid State Phenomena2014，205，：	1
11	Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron-oxygen complexes via a hole-emitting process显示文摘	Lim B Voronkov V V Falster R	2011	Appl Phys Lett2011，98，16：	1
12	Nitrogen interaction with vacancies in silicon 显示文摘	Voronkov V V Falster R	2004	Materials Science and Engineering2004，114，：	1
13	The effect of nitrogen on void formation in Czochralski silicon crystals 显示文摘	Voronkov V V Falster R	2005	Crystal Growth2005，273，：	1
14	The engineering of intrinsic point defects in silicon wafers and crystals显示文摘	Falster R Voronkov V V	2000	Material Science and Engineering2000，73，：	1
15	Nitrogen interaction with vacancies in silicon 显示文摘	Voronkov V V Falster R	2004	Materials Science and Engineering2004，114，：	1
16	Light interception efficiency explained by two simple variables:A test using a diversity of small-to medium-sized woody plants显示文摘	Duursma R A Falster D S Valladares F	2012	New Phytologist2012，193，2：	1
17	Vacancy and Self-interstitial Concentration Incorporated into Growing Silicon Crystals显示文摘	Voronkov V V Falster R	1999	Journal of Applied Physics1999，86，11：	1
18	Grown in microdefect, residual vacancies and oxygen precipitation bands in czochralski silicon 显示文摘	VORONKOV V V FALSTER R	1999	Crystal Growth1999，204，4：	1
19	Vacancy-type microdefect formation in czochralski silicon 显示文摘	VORONKOV V V FALSTER R	1998	Crystal Growth1998，194，1：	1
20	Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells 显示文摘	Voronkov V V Falster R	2010	J Appl Phys2010，107，05：	1

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