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9篇 您的检索式:作者名="Devre M W"
    题名 作者 年代 出处 被引量
1Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers显示文摘LEE J W JUNG P G DEVRE M 2002SSE2002,46,:1
2Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas显示文摘J W Lee M W Devre B H Reelfs 2000J Vac Sci Technol2000,18,4:1
3Optimization of Gas Flow and Etch Depth Uniformity for Plasma Etching of Large Area GaAs Wafers 显示文摘Lee J W Jung P G Devre M 2002Solid-State Electronics2002,46,5:1
4Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers显示文摘J W Lee P G Jung M Devre 2002Solid-State Electronics2002,,46:1
5Advanced Selective Dry Etching of GaAs/AlGaAs in High Density Inductively Coupled Plasmas显示文摘Lee J W Devre M W Reeffs B H 2000Vac Sci Technol2000,18,4:1
6Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers显示文摘 Jung P G Devre M 2002Solid-State Electronics2002,46,:1
7Stress ControUed Si-based PECVD Dielectrics 显示文摘Mackenzie K D Johnson D J DeVre M W 2005Electrochemical Society Proceedings2005,2005,1:1
8Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers显示文摘LEE J W JUNG P G DEVRE M 2002Solid-State Electronics2002,46,5:1
9Advanced selective dry etching of GaAs/A1GaAs in high density in- ductively coupled plasmas显示文摘LEE J W DEVRE M W REELFS B H 2000Journal of Vacuum Science and Technology A2000,18,4:1
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