| 1 | Deformation and removal of semiconductor and laser single crystals at extremely small scales显示文摘Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent polishing process,thus reducing the manufacturing cost.The development of cost-effective grinding technologies for those crystals requires an in-depth understanding of their deformation and removal mechanisms.As a result,a great deal of research efforts were directed towards studying this topic in the past two or three decades.In this review,we aimed to summarize the deformation and removal characteristics of representative semiconductor and laser single crystals in accordance with the scale of mechanical loading,especially at extremely small scales.Their removal mechanisms were critically examined based on the evidence obtained from highresolution TEM analyses.The relationships between machining conditions and removal behaviors were discussed to provide a guidance for further advancing of the grinding technologies for those crystals. | Yueqin Wu Dekui Mu Han Huang | 2020 | International Journal of Extreme Manufacturing2020，2，1： | 2 |
| 2 | Growth mechanisms of interfacial carbides in solid-state reaction between single-crystal diamond and chromium显示文摘Interfacial bonding is one of the most challenging issues in the fabrication,and hence comprehensively influences the properties of diamond-based metal matrix composites(MMCs)materials.In this work,solid-state(S/S)interface reaction between single-crystal synthetic diamond and chromium(Cr)metal was critically examined with special attention given to unveil the role of crystal orientation in the for-mation and growth of interfacial products.It has been revealed that catalytically converted carbon(CCC)was formed prior to chromium carbides,which is counterintuitive to previous studies.Cr 7 C 3 was the first carbide formed in the S/S interface reaction,aided by the relaxation of diamond lattices that re-duces the interfacial mismatch.Interfacial Cr 7 C 3 and Cr 3 C 2 carbides were formed at 600 and 800℃,respectively,with the growth preferred on diamond(100)plane,because of its higher density of surface defects than(111)plane.Interfacial strain distribution was quasi-quantitively measured using windowed Fourier Transform-Geometric Phase Analysis(WFT-GPA)analysis and an ameliorated strain concentration was found after the ripening of interfacial carbides.Textured morphologies of Cr_(3)C_(2) grown on diamond(100)and(111)planes were perceived after S/S interface reaction at 1000℃,which is reported for the first time.The underlying mechanisms of Cr-induced phase transformation on diamond surface,as well as the crystal orientation dependent growth of interfacial carbides were unveiled using the first-principles calculation.The formation and growth mechanisms of Cr_(3)C_(2) were elucidated using SEM,TEM and XRD analyses.Finally,an approach for tailoring the interfacial microstructure between synthetic diamond and bonding metals was proposed. | Zhuo Liu Wei Cheng Dekui Mu Qiaoli Lin Xipeng Xu Han Huang | 2023 | Journal of Materials Science & Technology2023，，13： | 0 |
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