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| 1 | Transarterial chemoembolization for liver metastases from solid pseudopapillary epithelial neoplasm of pancreas: A case report显示文摘Solid pseudo-papillary epithelial neoplasm(SPEN) is a rare epithelial tumor of pancreas with a low malignant potential occurs most commonly in young females. We report a case of 40 years old woman presented withextensive liver metastasis from SPEN of pancreatic body for which she was operated four years ago. Due to the extensive nature of metastatic disease she was offered Transarterial chemoembolisation(TACE) using gemcitabine as chemotherapeutic agent. Short term follow up after a month of TACE with multiphase computed tomography showed > 90% resolution in the viable tumor with significant clinical improvement. TACE ensures targeted delivery of chemotherapeutic drugs in higher doses with least systemic toxicity and is more effective and safe than systemic chemotherapy. TACE with gemcitabine was found to be very effective in our patient with numerous liver metastasis. | TV Prasad KS Madhusudhan Deep N Srivastava Nihar R Dash Arun K Gupta | 2015 | World Journal of Radiology2015，7，3： | 5 |
| 2 | Altered expression of novel genes in the cerebral cortex following experimental brain injury显示文摘 | Kobori N Clifton G L Dash P | 2002 | Brain Res Mol Brain Res2002，104，2： | 4 |
| 3 | Decreased Levels of Plasma Vitamin C and Increased Concentrations of Inflammatory and Oxidative Stress Markers After Stroke显示文摘 | Concepción Sánchez-Moreno John F. Dashe Tammy Scott David Thaler Marshal F. Folstein Antonio Martin | 2004 | Stroke: Journal of the American Heart Association2004，，1： | 4 |
| 4 | WiGig and IEEE 802.11ad for Multi-Gigabyte-Per-Second WPAN and WLAN显示文摘The Wireless Gigabit Alliance (WiGig) and IEEE 802.11ad are developing a multigigabit wireless personal and local area network (WPAN/WLAN) specification in the 60 GHz millimeter wave band. Chipset manufacturers, original equipment manufacturers (OEMs), and telecom companies are also assisting in this development. 60 GHz millimeter wave transmission will scale the speed of WLANs and WPANs to 6.75 Gbit/s over distances less than 10 meters. This technology is the first of its kind and will eliminate the need for cable around personal computers, docking stations, and other consumer electronic devices. High-definition multimedia interface (HDMI), display port, USB 3.0, and peripheral component interconnect express (PCIe) 3.0 cables will all be eliminated. Fast downloads and uploads, wireless sync, and multi-gigabit-per-second WLANs will be possible over shorter distances. 60 GHz millimeter wave supports fast session transfer (FST) protocol, which makes it backward compatible with 5 GHz or 2.4 GHz WLAN so that end users experience the same range as in today's WLANs. IEEE 802.11ad specifies the physical (PHY) sublayer and medium access control (MAC) sublayer of the protocol stack. The MAC protocol is based on time-division multiple access (TDMA), and the PHY layer uses single carrier (SC) and orthogonal frequency division multiplexing (OFDM) to simultaneously enable low-power, high-performance applications. | Sai Shankar N Debashis Dash Hassan El Madi Guru Gopalakrishnan | 2012 | ZTE Communications2012，10，4： | 4 |
| 5 | Potentials of GaP as millimeter wave IMPATT diode with reference to Si,GaAs and GaN显示文摘This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP,GaAs,Si and GaN( wurtzite,wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage( V_B) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4. 9 × 10~9 W/m^2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN( wz) displays large values of break down voltage,efficiency and power density as compared to Si,GaAs and GaP IMPATTs. | Janmejaya Pradhan S K Swain S R Pattnaik G N Dash | 2019 | 红外与毫米波学报2019，38，4： | 2 |
| 6 | Characteristics of a GaN-based Gunn diode for THz signal generation显示文摘A generalized large-signal computer simulation program for a Gunn oscillator has been developed.The properties of a Gunn diode oscillator based on the widely explored GaN,are investigated using the developed program.The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes.An output power of 1400 kW/cm^2 is achieved from the GaN Gunn diode,as compared to 4.9 kW/cm^2 from a GaAs diode. | R K Parida N C Agrawala G N Dash A K Panda | 2012 | Journal of Semiconductors2012，33，8： | 2 |
| 7 | Cytopathology of mesenchymal chondrosarcomas:a report and comparison of four patients显示文摘 | Trembath D G Dash R Major N M Dodd L G | 2003 | Cancer2003，99，4： | 1 |
| 8 | MRI in the detection of malignant infhration of bone marrow显示文摘 | Daffner RH Lupetn AR Dash N | 1986 | AJR Am J Roentgenol1986，146，： | 1 |
| 9 | Application of a Multivariable Feedback Linearization Scheme for Statcom Control显示文摘 | Sahoo N C Panigrahi K Dash P K | 2002 | Electric Power Systems Research2002，62，2： | 1 |
| 10 | Histone deactylase inhibition combined with behavioral therapy enhances learning and memory following traumatic brain injury 显示文摘 | Dash P K Orsi S A Moore A N | 2009 | Neuroscience2009，163，1： | 1 |
| 11 | Comparing the efficacy of tean, based learning strategies in a problem based learning curricu lum显示文摘 | Anwar K Shaikh A A Dash N R | 2012 | APMIS2012，120，9： | 1 |
| 12 | Experimental and theoretical investigation of solubility of carbon dioxide in concentrated aqueous solution of 2-amino-2-methyl-1-propanol and piperazine显示文摘 | Dash S K Samanta A N Bandyopadhyay S S | | 0，，01： | 1 |
| 13 | Codrug: an efficient approach for drug optimization显示文摘 | DAS N DHANAWAT M DASH B | 2010 | Eur J Pharm Sci2010，41，5： | 1 |
| 14 | Tribological properties of N+ion implanted ultrananocrystalline diamond films显示文摘 | PANDA K KUMAR N PANIGRAHI B K POLAKI S R SUNDARAVEL B DASH S TYAGI A K LIN I N | 2013 | Tribology International2013，57，： | 1 |
| 15 | A novel nanoparticle formula-tion for sustained paclitaxel delivery 显示文摘 | Trickier WJ N^vekar AA Dash AK | 2008 | AAPS PharmSciTech2008，9，2： | 1 |
| 16 | Chlorophyll fluores-cence parameters and chlorophyll content in mangrove speciesgrown in different salinity 显示文摘 | PANDA D DASH P K DHAL N K | 2006 | Gen Appl Plant Physiology2006，32，： | 1 |
| 17 | Asymmetry of the acceleration andde- celeration capacity ofheart rate is strongly dependent on ventricularpre- mature complexes 显示文摘 | Wessel N Dash S Kurths J | 2007 | Biomed Tech ( Berl )2007，52，3： | 1 |
| 18 | Molecular activity underiyingworking memory显示文摘 | Dash PK Moore AN Koboii N | 2007 | Leam Mem2007，14，8： | 1 |
| 19 | Precipitation of Boehmite in Sodium Aluminate Liquor显示文摘 | Dash B Tripathy B C Bhattacharya I N | 2009 | Hydrometal- lurgy2009，95，： | 1 |
| 20 | Geometrically nonlinear bending analysis of laminated composite plate显示文摘 | DASH P SINGH B N | | 0，，10： | 1 |
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