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| 1 | Tubular/helical architecture construction based on rolled-up AlN nanomembranes and resonance as optical microcavity显示文摘Aluminum nitride(AlN)has attracted a great amount of interest due to the fact that these group III–V semiconductors present direct band gap behavior and are compatible with current micro-electro-mechanical systems.In this work,three dimensional(3D)AlN architectures including tubes and helices were constructed by rolling up AlN nanomembranes grown on a silicon-on-insulator wafer via magnetron sputtering.The properties of the AlN membrane were characterized through transmission electron microscopy and X-ray diffraction.The thickness of AlN nanomembranes could be tuned via the RIE thinning method,and thus micro-tubes with different diameters were fabricated.The intrinsic strain in AlN membranes was investigated via micro-Raman spectroscopy,which agrees well with theory prediction.Whispering gallery mode was observed in AlN tubular optical microcavity in photoluminescence spectrum.A postprocess involving atomic layer deposition and R6G immersion were employed on as-fabricated AlN tubes to promote the Q-factor.The AlN tubular micro-resonators could offer a novel design route for Si-based integrated light sources.In addition,the rolled-up technology paves a new way for AlN 3D structure fabrication,which is promising for AlN application in MEMS and photonics fields. | Jinyu Yang Yang Wang Lu Wang Ziao Tian Zengfeng Di Yongfeng Mei | 2020 | Journal of Semiconductors2020，41，4： | 2 |
| 2 | Fabrication of high quality strained SiGe on Si substrate by RPCVD显示文摘In this study,the growth kinetics of SiGe in a reduced pressure chemical vapor deposition system using dichlorosilane(SiH2Cl2) and germane(GeH4) as the Si and Ge precursors were investigated.The SiGe growth rate and Ge content were found to depend on the deposition temperature,GeH4 flow and reactor chamber pressure.The SiGe growth rate escalates with increasing deposition temperature,while the Ge content is reduced.The SiGe growth rate accelerates with increasing GeH4 flow,while the Ge content increases more slowly.According to the experimental data,a new relationship between Ge content(x) and F(GeH4)/F(SiH2Cl2) mass flow ratio is deduced:x2.5/(1x) = nF(GeH4)/F(SiH2Cl2).The SiGe growth rate and Ge content improve with increasing reactor chamber pressure.By selecting proper precursor flows and reactor pressure,SiGe films with the same Ge content can be fabricated at various temperatures.However,the quality of the SiGe crystals is clearly dependent on the deposition temperature.At lower deposition temperature,higher crystalline quality is achieved.Because the growth rate dramatically drops with lower temperatures,the optimum growth temperature must be a compromise between the crystalline quality and the growth rate.X-ray diffraction,Raman scattering spectroscopy and atomic force microscopy results indicate that 650°C is the optimum temperature for fabrication of Si0.75Ge0.25 film. | XUE ZhongYing CHEN Da LIU LinJie JIANG HaiTao BIAN JianTao WEI Xing DI ZengFeng ZHANG Miao WANG Xi | 2012 | Chinese Science Bulletin2012，57，15： | 1 |
| 3 | Facile control of surface wettability in TiOJpoly( methyl methacrylate) composite films 显示文摘 | Mengjin anga Zengfeng Di Jung-Kun Lee | 2012 | Journal of Colloid and Interface Science2012，368，： | 1 |
| 4 | Investigation of SiGe-on-Insulator Novel Structure显示文摘SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si. | Lin Chenglu Liu Weili An Zhenghua Di Zengfeng Zhang Miao | 2004 | Journal of Rare Earths2004，22，z2： | 0 |
| 5 | Rolling origami with smart materials显示文摘Three-dimensional (3D) functional devices have become an interesting topic meeting the challenge of device miniaturization and high integration in electron devices and microelectromechanical systems. Based on this exciting situation, origami in micro/nanoscale combining art and advanced science was widely utilized to transform two-dimensional (2D) sheets into 3D microstructures for various applications, such as micro-grippers [1](Fig. 1a). | Yang Wang Xing Li Borui Xu Ziao Tian Zengfeng Di Yongfeng Mei | 2019 | Science Bulletin2019，64，15： | 0 |
| 6 | Biodegradable germanium electronics for integrated biosensing of physiological signals显示文摘Transient electronics that can disappear or degrade via physical disintegration or chemical reaction over a pre-defined operational period provide essential for their applications in implantable bioelectronics due to the complete elimination of the second surgical extraction.However,the dissolution of commonly utilized bioresorbable materials often accompanies hydrogen production,which may cause potential or irreparable harm to the human body.This paper introduces germanium nanomembrane-based bioresorbable electronic sensors,where the chemical dissolution of all utilized materials in biofluidic theoretically have no gaseous products.In particular,the superior electronic transport of germanium enables the demonstrated bioresorbable electronic sensors to successfully distinguish the crosstalk of different physiological signals,such as temperature and strain,suggesting the significant prospect for the construction of dual or multi-parameter biosensors.Systematical studies reveal the gauge factor and temperature coefficient of resistance comparable to otherwise similar devices with gaseous products during their dissolution. | Haonan Zhao Zhongying Xue Xiaozhong Wu Zhihuan Wei Qiuyu Guo Miao Xu Chunyan Qu Chunyu You Yongfeng Mei Miao Zhang Zengfeng Di Qinglei Guo | 2022 | npj Flexible Electronics2022，6，1： | 0 |
| 7 | Interface dipole engineering in metal gate/high-k stacks显示文摘Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond,there are still many challenges to be solved.Among the various technologies to tackle these problems,interface dipole engineering (IDE) is an effective method to improve the performance,particularly,modulating the effective work function (EWF) of metal gates.Because of the different electronegativity of the various atoms in the interfacial layer,a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack.This paper reviews the interface dipole formation induced by different elements,recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation,and mechanism of IDE. | HUANG AnPing ZHENG XiaoHu XIAO ZhiSong WANG Mei DI ZengFeng CHU Paul K | 2012 | Chinese Science Bulletin2012，57，22： | 0 |
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