Interface dipole engineering in metal gate/high-k stacks

查看全文 作　　者：HUANG [1]AnPing;ZHENG [1]XiaoHu;XIAO [1]ZhiSong;WANG [1]Mei;DI [2]ZengFeng;CHU Paul [3]K

机构地区：[1]Department of Physics,Beihang University,Beijing 100191,China;[2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;[3]Department of Physics and Materials Science,City University ofHong Kong,Tat Chee Avenue,Kowloon,Hong Kong,China

出　　处：《Chinese Science Bulletin》索引2012年第57卷第22期,共7页

基　　金：supported by the National Natural Science Foundation of China(51172009,51172013 and 11074020);Program for New Century Excellent Talents in University(NCET-08-0029);Hong Kong Research Grants Council(RGC)General Research Funds(GRF)(CityU112510);City University of Hong Kong Strategic Research Grant(SRG)(7008009) 摘　　要：Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond,there are still many challenges to be solved.Among the various technologies to tackle these problems,interface dipole engineering (IDE) is an effective method to improve the performance,particularly,modulating the effective work function (EWF) of metal gates.Because of the different electronegativity of the various atoms in the interfacial layer,a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack.This paper reviews the interface dipole formation induced by different elements,recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation,and mechanism of IDE. 关键词：IDE接口金属栅偶极子堆叠工程 MOSFET 半导体场效应晶体管技术节点

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Interface dipole engineering in metal gate/high-k stacks

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