| 3 | Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films显示文摘In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques. | C.Trager-Cowan A.Alasmari W.Avis J.Bruckbauer P.R.Edwards B.Hourahine S.Kraeusel G.Kusch R.Johnston G.Naresh-Kumar R.W.Martin M.Nouf-Allehiani E.Pascal L.Spasevski D.Thomson S.Vespucci P.J.Parbrook M.D.Smith J.Enslin F.Mehnke M.Kneissl C.Kuhn T.Wernicke S.Hagedorn A.Knauer V.Kueller S.Walde M.Weyers P.-M.Coulon P.A.Shields Y.Zhang L.Jiu Y.Gong R.M.Smith T.Wang A.Winkelmann | 2019 | Photonics Research2019，7，11： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员