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15篇 您的检索式:作者名="Chumbes"
    题名 作者 年代 出处 被引量
1AIGaN/GaN HEMT with 300-GHz fmax 显示文摘Chung J W Hoke W E Chumbes E M 2010IEEE Electron Device Letters2010,31,3:1
2The effect of surface passivation on microwave characteristics of undoped AlGaN/gaN HEMT's显示文摘 chu Kenneth K Chumbes E Martin 2000IEEE Electron Device Leff2000,21,:1
3The effect of surface passivation on microwave characteristics of undoped AlGaN/GaN HEMT's显示文摘Green B M Chu K K Chumbes E M 2000IEEE Elec Dev Lett2000,21,6:1
4The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs 显示文摘Green B M Chu K K Chumbes E M 2000IEEE Electron Device Lett2000,21,6:1
5The effect of surface passivation on the microwave characteristics of undoped A1GaN/GaN HEMTs 显示文摘GREEN B M CHU K K CHUMBES E M 2000IEEE EDL2000,21,6:1
6AlGaN/GaN HEMT With 300 GHz fmax显示文摘Chung J W Hoke W E M Chumbes E M 2010IEEE Electron Device Lett2010,31,3:1
7The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT显示文摘GREEN B M CHU K K CHUMBES E M 2000IEEE Electron Devices Lett2000,21,6:1
8Al Ga N/Ga N HEMT with 300 GHz fmax显示文摘CHUNG J W HOKE W E CHUMBES E M 2010IEEE Electron Device Lett2010,31,3:1
9The Effect of Surface Passivation on the Microwave Characteristics of Undoped AIGaN/GaN HEMTs 显示文摘Green B M Chu K K Chumbes E M 2000IEEE Electron Device Lett2000,21,3:1
10The effect of surface passivation on microwave characteristics of undoped AlGaN/GaN HEMT's显示文摘GREEN B M CHU K K CHUMBES E M 2000IEEE Electron Device Lett2000,21,6:1
11The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs显示文摘Green B M Chu K K Chumbes E M 2000IEEE Electron Device Lett2000,21,:1
12The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT' s显示文摘 CHU K CHUMBES E 2000IEEE Electron Device Lett2000,21,6:1
13Single step process for epitaxial lateral overgrowth GaN on SiC and ano saphire substrates显示文摘Smart J A Chumbes E M Schremer A T 1999Appl Phys Lett1999,75,24:1
14查看详情显示文摘Chumbes E M Schremer A T Smart J A 0,,:1
15The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's显示文摘GREEN B M CHU K K CHUMBES E M 2000IEEE Electron Device Letters2000,21,6:1
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