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35篇 您的检索式：作者名="CIAPPA M"

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	题名	作者	年代	出处	被引量
1	Lifetime prediction and design of reliability tests for high-power devices in automotive applications 显示文摘	CIAPPA M CARBGNANI F FICHTNER W	2003	IEEE Transactions on Materials Reliability2003，3，4：	1
2	Selected Failure Mechanisms of Modem Power Modules 显示文摘	CIAPPA M	2002	Microelectronics reliability2002，42，4：	1
3	Selected failure mechanisms of modern power modules显示文摘	CIAPPA M	2002	Microelectronics Reliability2002，42，2：	1
4	Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast显示文摘	BUZZO M CIAPPA M MILLAN J	2007	Microelectronic Engineering2007，84，：	1
5	Lifetime Prediction of IGBT Modules for Traction Applications显示文摘	CIAPPA M FICHTNER W	2000	IEEE International Reliability Symposium2000，38，：	1
6	Thermal component model for electrothermal analysis of IG- BT module systems显示文摘	Yun C S Malberti P Ciappa M	2001	IEEE Transactions on Ad- vanced Packaging2001，24，3：	1
7	Extractionof accurate thermal compact models for fast electro- thermal simulation of IGBT modules in hybrid elec- tric vehicles显示文摘	Ciappa M Fichtner W Kojima T	2005	Microeleetronics Reliability2005，45，911：	1
8	New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions显示文摘	Barlini D Ciappa M Casellazzi A	2006	Microelectronics Relia- bility2006，46，911：	1
9	New technique for the measurement of the static and of the transient junction tem- perature in IGBT devices under operating conditions 显示文摘	BARLINI D CIAPPA M CASTELLAZZI A	2006	Microe- lectronics Reliability2006，46，911：	1
10	Extraction of accurate thermal compact models for fast electro-thermal simulation of IGBT modules in hybrid electric vehicles 显示文摘	CIAPPA M FICHTNER W KOJIMA T	2005	Microelectron Reliab2005，45，7：	1
11	Selected Failure Mechanisms of Modern Power Modules显示文摘	M Ciappa	2002	Microelectronics Reliability2002，42，45：	1
12	New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions显示文摘	Barlini D Ciappa M Castellazzi A	2006	Microelectronics Reliability2006，，46：	1
13	Selected failure mechanisms of modem power modules 显示文摘	Ciappa M	2002	Microelectronics Reliability2002，42，：	1
14	New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions 显示文摘	BARLINI D CIAPPA M CASTELLAZZI A	2006	Microelectron Reliab2006，46，91011：	1
15	Lifetime predi- ction and design of reliability tests for high-power devices in automotive applications显示文摘	Ciappa M Carbognani F Fichtner W	2003	IEEE Transa- ctions on Device Mater2003，3，4：	1
16	Selected failure mechanisms of modern power modules显示文摘	Ciappa M	2002	Microelectronics Reliability2002，42，45：	1
17	Lifetime prediction and design of relia- bility tests for high power devices in automotive applica- tions 显示文摘	Ciappa M	2003	IEEE Transactions on Device and Materials Reliability2003，3，4：	1
18	Extraction of ac- curate thermal compact models for fast electro-thermal simulation of IGBT modules in hybrid electric vehicles 显示文摘	Ciappa M Fichtner W Kojima T	2005	Microelectronics Reliability2005，45，91011：	1
19	New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions 显示文摘	Barlini D Ciappa M Castellazzi A	2006	Microeleetronics Reliability2006，46，9：	1
20	Selected failure mechanisms of modern power modules显示文摘	Ciappa M	2002	Microelectronics Reliability2002，42，45：	1

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