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| 1 | Highly textured ZnO thin films:a novel economical preparation and approachment for optical devices,UV lasers and green LEDS显示文摘 | RAMAMOORTHY K ARIVANANDHAN M SANKARANARAYANAN K | 2004 | Mater Chem Phys2004，85，2： | 1 |
| 2 | The impact of Ge co- doping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal显示文摘 | Arivanandhan M Gotoh R Watahiki T | 2012 | J Appl Phys2012，111，04： | 1 |
| 3 | Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth 显示文摘 | Arivanandhan M Gotoh R Fujiwara K | 2015 | J Alloys Compd2015，639，： | 1 |
| 4 | Growth of Urea Doped Benzophenone Single Crystal for Nonlinear Optical Applications 显示文摘 | Arivanandhan M Sanjeeviraja C Sankaranarayanan K | 2006 | Optical Materials2006，28，： | 1 |
| 5 | The impact of Ge co- doping on grown-in O precipitates in Ga-doped Czochralski-silicon 显示文摘 | Arivanandhan M Gotoh R Fujiwara K | 2011 | Cryst Growth2011，321，1： | 1 |
| 6 | Grown-in microde- fects and photovoltaic characteristics of heavily Ge co-doped Czo- chralski-grown p-type silicon crystals显示文摘 | Arivanandhan M Gotoh R Fujiwara K | 2013 | Scripta Mater2013，69，9： | 1 |
| 7 | Germanium-doped Czoehralski silicon:A novel material for solar cells显示文摘 | Arivanandhan M Raira G Fujiwara K | 2013 | Phys Status Solidi(c)2013，10，12： | 1 |
| 8 | Ga segregation du- ring Czochralski-Si crystal growth with Ge codoping显示文摘 | Gotoh R Arivanandhan M Fujiwara K | 2010 | J Cryst Growth2010，312，20： | 1 |
| 9 | Ga segregation in Czochralski-Si crystal growth with B codoping显示文摘 | Huang X M Arivanandhan M Gotoh R | 2008 | J Cryst Growth2008，310，14： | 1 |
| 10 | Highly textured ZnO thin films:a novel economical preparation and approach for optical devices,UV lasers and green LEDS显示文摘 | RAMAMOORTHY K ARIVANANDHAN M SANKARANARAYANAN K | 2004 | Mater Chem Phys2004，85，2： | 1 |
| 11 | Highly textured ZnO thin films:a novel economical preparation and approachment for optical devices,UV Lasers and green LEDS 显示文摘 | RAMAMOORTHY K ARIVANANDHAN M SANKARANARAYANANK | 2004 | Materials Chemistry and Physics2004，85，2： | 1 |
| 12 | The Impact of Ge Codoping on the Enhancement of Photovoltaic characteristics of B-doped Czochralski Grown Si Crystal显示文摘 | Arivanandhan M Gotoh R Watahiki T | 2012 | Journal of Applied Physics2012，111，4： | 1 |
| 13 | Highly textured ZnO thin films:A novel economical preparation and approachment for optical devices, UV lasers and green LEDs显示文摘 | Ramamoorthy K Arivanandhan M Sankaranarayanan K | 2004 | Mater Chem Phys2004，85，： | 1 |
| 14 | Germanium-doped Czochralski Silicon:a Novel Material for Solar Cells显示文摘 | Arivanandhan M Raira G Fujiwara K | 2013 | Physica Status Solidi(c)2013，10，12： | 1 |
| 15 | Highly textured ZnO thin films: a novel economical preparation and approachment for optical devices, UV lasers and green LEDs显示文摘 | K Ramamoorthy M Arivanandhan K Sankaranarayanan C Sanjeeviraja | 2003 | Materials Chemistry and Physics2003，，2： | 1 |
| 16 | Directional growth of organic NLO crystal by different growth methods:a comparative study by means of XRD,HRXRD and laser damage threshold显示文摘 | Arivanandhan M Huang X M Uda S Bhagavannarayana G Vijayan N Sankaranarayanan K Ramasamy P | | 0，，21： | 1 |
| 17 | TiNiHf/SiO_(2)/Si shape memory film composites for bidirectional micro actuation显示文摘The martensitic phase transformation in Ti_(40.4)Ni_(48)Hf_(11.6) shape memory alloys is leveraged for bi-directional actuation with TiNiHf/SiO_(2)/Si com-posites.The shape memory properties of magnetron sputtered Ti_(40.4)Ni_(48)Hf_(11.6) films annealed at 635℃-5 min are influenced by film thickness and the underlying substrate.Decreasing TiNiHf film thick-ness from 21μm to 110 nm results in the reduction of all characteristic transformation temperatures until a critical thickness is reached.Particularly,Ti_(40.4)Ni_(48)Hf_(11.6) thin films as low as 220 nm show transfor-mations above room temperature when deposited on SiO_(2) buffer layer,which is of great interest in nano-actuation.In comparison,220 nm films on Si substrates are austenitic at room temperature,and thus not suitable for actuation.Thermal fatigue tests on TiNiHf/SiO_(2)/Si bimorphs demonstrate better functional fatigue characteristics than freestanding films,with an average reduction of 15℃ after 125 cycles,with tempera-ture stabilization subsequently.Experimental bi-directional actuation results are promising in the development of bistable actuators within a PMMA/TiNiHf/Si trimorph composite,whereby the additional PMMA layer undergoes a glass transition at 105℃.With the aid of constitutive modeling,a route is elaborated on how bistable actuation can be achieved at micro-to nanoscales by showing favorable thickness combinations of PMMA/TiNiHf/Si composite. | Sabrina M.Curtis Marian Sielenkamper Gowtham Arivanandhan Duygu Dengiz Zixiong Li Justin Jetter Lisa Hanke Lars Bumke Eckhard Quandt Stephan Wulfinghoff Manfred Kohl | 2022 | International Journal of Smart and Nano Materials2022，13，2： | 0 |
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