维普期刊资源整合服务平台（V6.5）

38篇 您的检索式：期刊名="Microelec Reliab"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	Channel-carrier,rnobility parameters for 4H SiC MOSFETs显示文摘	LINEWlH H DIMITRIJEV S CHEONG K Y	2003	Microelec Reliab2003，43，3：	1
2	Failure modes in surface micromachined microelectro-mechanical actuation systems 显示文摘	MILLER S L RODGERS M S LA VIGNE G	1999	Microelec and Reliab1999，39，8：	1
3	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study 显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	Microelec Reliab2002，42，5：	1
4	Control of the electromagnetic compatibility: an issue for IC reliability 显示文摘	GROS J DUCHAMP G LEVANT J	2011	Microelec Reliab2011，51，911：	1
5	Evaluation of A1GaInP LEDs reliability based on accelerated tests 显示文摘	NOUGERIA E VAZQUEZ M NUNEZ N	2009	Microelec Reliab2009，49，911：	1
6	A thorough investigation of MOSFETs NBTI degradation 显示文摘	HUARD V DENAIS M PERRIER M	2005	Microelec Reliab2005，45，1：	1
7	Thermaltransient characteristics of die attach in high power LED PKG 显示文摘	KIM H H CHOI S H SHIN S H	2008	Microelec Reliab2008，48，：	1
8	Reliability of high temperature solder alternatives 显示文摘	MC CLUSKEY F P DASH M WANG Z	2006	Microelec Reliab2006，46，911：	1
9	Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate 显示文摘	HU S D LUO J TAN K Z	2012	Microelec Reliab2012，59，4：	1
10	Suppression of hot-electron-induced interface degradation in metal- oxide-semiconductor devices by backsurface argon bombardment显示文摘	Huang M Q Lai P T Xu J P	1998	Microelec Reliab1998，38，：	1
11	ESD issues in advanced CMOS bulk and FinFET technologies: processing, protection devices and circuit strategies 显示文摘	RUSS C	2008	Microelec Reliab2008，48，89：	1
12	ESD robustness prediction and protection device design in partially depleted SOI technology 显示文摘	Rahaa P Smith J C Miller J W	1998	Microelec Reliab1998，38，11：	1
13	Reliability challenges for copper interconnects 显示文摘	LI B SULLIVAN T D LEE T C	2004	Microelec Reliab2004，44，3：	1
14	An introduction to Cu electromigration显示文摘	HAU C S	2004	Microelec Reliab2004，44，2：	1
15	Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique 显示文摘	RUZZILLIA G GOVOREANUB B IRRERA F	2007	Microelec Reliab2007，47，45：	1
16	Investigation of diode geometry and metal line pattern for robust ESD protection applications 显示文摘	LI Y LIOU J VINSON J	2008	Microelec Reliab2008，48，10：	1
17	Experimental and numerical investigation about SEB/ SEGR of power MOSFET 显示文摘	BUSATTO G PORZIO A VELARDI F	2005	Microelec Reliab2005，45，9：	1
18	Design of multi-finger HBTs with a thermal- electrical model 显示文摘	CHANG Y H CHIANG-CHANG C C LEE Y C	2003	Microelec Reliab2003，43，3：	1
19	Dynamic void formation in a DD-copper-structure with different met- allization geometry 显示文摘	KIRSTEN W Z DAVID D YVES D	2007	Microelec Reliab2007，47，2：	1
20	ESD issues in compound semiconductor high-frequency devices and circuits 显示文摘	BOCK K	1998	Microelec and Reliab1998，38，11：	1

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示