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	题名	作者	年代	出处	被引量
1	Accelerated Life Testing and Failure Analysis of Single Stage MMIC Amplifier 显示文摘	Keith A Jason A	1994	IEEE Trans Electron Devices1994，41，8：	2
2	Computer-aided two-dimensional analysis of bipolar transistors 显示文摘	Slotboom J W	1984	IEEE Trans on Electronic Devices1984，20，8：	2
3	Accurate cold-test model of helical TWT slow-wave circuits显示文摘	Kory C L Dayton J A	1998	IEEE Trans Electron Devices1998，45，4：	1
4	The effect of metallization on the ohmic contact resistivity to heavily B-doped polycrystalline diamond films显示文摘	WERNER M DORSCH O BAERWIND H U	1995	IEEE Trans Electron Devices1995，42，7：	1
5	A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects显示文摘	Baccarani G Reggiani S	1999	IEEE Trans Electron Devices1999，46，：	1
6	Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET's显示文摘	SUBRAMANIUM S BHATTACHARYA P K STAKER K J GHOSH G L BADAWI M H	1985	IEEE Trans Electron Devices1985，32，1：	1
7	显示文摘	Schroder D K	1982	IEEE Trans Electron Devices1982，29，：	1
8	Accurate electrical characterization of forward AC behavior of real semiconductor diode: giant negative capacitance and nonlinear interfacial layer 显示文摘	Wang C D Zhu C Y Zhang G Y	2003	IEEE Trans Electron Devices2003，50，4：	1
9	A Physical Model for On-Chip Spiral Inductors With Accurate Substrate Modeling显示文摘	Huo X Philip C H Kevin J C	2006	IEEE Trans Electron Devices2006，53，12：	1
10	Short - channel effects and drain - induced barrier lowering in nanometerscale GaAs MESFET's 显示文摘	James A Adams Thayne I G Wilkinson C D W	1993	IEEE Trans Electron Devices1993，40，6：	1
11	A Novel High-k SONOS Memory Using Ta N/Al2O3/Ta2O5/Hf O2/Si Structure for Fast Speed and Long Retention Operation显示文摘	Wang X G Kwong D L	2006	IEEE Trans Electron Devices2006，53，：	1
12	Silicom Single- Electron Devices and Their Applications 显示文摘	Yasuo T Akira F Yukinori O Katsumi M	2000	IEEE Trans Electron Device2000，13，：	1
13	Optical control of semiconductor closing and opening switches显示文摘	LEE C H	1990	On electron devices IEEE Trans1990，37，12：	1
14	Recessedgate structure approach toward normally off high- voltage AIGaN/GaN HEMT for power electronics applications 显示文摘	Saito W Takada Y Kuraguchi M	2006	IEEE Trans Electron Devices2006，53，2：	1
15	Fast-and super-fast-warm-up cathode using novel APG/APBN heaters显示文摘	Cattelino M J Miram G V Smith B	1991	IEEE Trans on Electron Devices1991，38，10：	1
16	Study of traveling wave tube with folded-waveguide circuit shielded by photonic crystals显示文摘	Gong Yubin Yin Hairong Wei Yanyu	2010	IEEE Trans on Electron Devices2010，57，5：	1
17	Effect of helical slow-wave circuit variations on TWT cold-test characteristics显示文摘	Kory C L Dayton J A	1998	IEEE Trans Electron Devices1998，45，4：	1
18	Physical DMOST modeling for high-voltage IC CAD显示文摘	Kim Yeong-Seuk Fossum Jerry G	1990	IEEE Trans on Electron Devices1990，37，3：	1
19	Essential physics of carrier transport in nanoscale MOSFETs显示文摘	Lundstrom Mark Ren Zhibin	2002	IEEE Trans Electron Devices2002，49，：	1
20	Dual-eletron-injector-structure electrically alterableread-only-memorry modeling studies 显示文摘	Dimaria D J Demeyer K M Dong D W	1981	IEEE Tran Electron Device1981，28，：	1

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