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29篇 您的检索式：期刊名="IEDM Tech Dig"

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	题名	作者	年代	出处	被引量
1	显示文摘	Aberg I Ni Chleirigh C Olubuyide O O	2004	IEDM Tech Dig2004，，：	1
2	ALD HfO using heavy water (D2O) for improved MOSFET stability 显示文摘	TSENG H H RAMON ME HEBEBT L	2003	IEDM Tech Dig2003，78，12：	1
3	High voltage thin layer device ( Resurf device) 显示文摘	APPLES J A VAES H M J	1979	IEDM Tech Dig1979，，：	1
4	Thermally robust high-quality HfN-HfO2 gate stack for advanced CMOS devices显示文摘	Yu H Y Kang J F	2003	IEDM Tech Dig2003，，：	1
5	Noise performance of a color CMOS photogate image sensor显示文摘	Blanksby A J Loinaz M J Inglis D A	1997	IEDM Tech Dig1997，，：	1
6	The insulated gate rectifier(IGR):A new power switching device显示文摘	BALIGA B J	1982	IEDM Tech Dig1982，，：	1
7	Totally silicided(CoSi2) polysilicon:a novel approach to very low resistive gate without metal CMP nor etching显示文摘	Tavel B	2001	IEDM Tech Dig2001，，：	1
8	High mobility Si/SiGe strained channel MOS transistors with HfO2/TiN gate stack 显示文摘	DATTA S DEWEY G DOCZY M	2003	IEDM Tech Dig2003，2，5：	1
9	Interconnect scaling-The Real Limiter to High Performance ULSI显示文摘	M Bohr	1995	IEEE IEDM Tech Dig1995，，：	1
10	The utilization of charge pumping techniques to evaluate the energy and spatial distribution of interface states of an MOS transistor 显示文摘	BACKENSTO W V VISWANATHAN C R	1976	IEDM Tech Dig1976，22，3：	1
11	Frequency dependent charge-pumping, how deep does it probes 显示文摘	WANG Y LEE V CHEUNG K P	2006	IEDM Tech Dig2006，9，8：	1
12	Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics 显示文摘	KOYAMA M KANEKO A INO K	2002	IEDM Tech Dig2002，2，2：	1
13	Halo doping effects in submi-cron DI-LDD device design显示文摘	Codella C F Ogura S	1985	IEDM Tech Dig1985，，：	1
14	Helical waveguide miilimwter wave TWT显示文摘	C Liss R Harper M P Puri	1988	IEDM Tech Dig1988，11，：	1
15	, Fabrication of high quality ultrathin HfO2 gate dielectric MOSFET' s using deuterium anneal 显示文摘	Choi R Onishi K Kang C S	2002	IEDM Tech Dig2002，，：	1
16	Experimental determination of band offset energies between Zr silicate alloy dielectrics and crystalline Si substrates by XAS, XPS and AES and ab initio theory: A new approach to the compositional dependence of direct tunneling currents 显示文摘	Lucovsky G Rayner B Zhang Y	2002	IEDM Tech Dig2002，，：	1
17	Low Velocity Spread Axis Encirchng Electron Beam Forming System显示文摘	Scheitrum G P Symons R S True R B	1989	Tech Dig IEEE IEDM1989，，：	1
18	A 110-W Heterojunction Fet on Thinned Sapphire Substrate 显示文摘	Ando Y Okamoto Y Miyamoto H	2001	IEDM Tech Dig2001，17，3：	1
19	The deformable relaxation mesh technique for solution of electron optics problems显示文摘	TRUE R	1975	IEDM Tech Dig1975，，：	1
20	Three-dimensional simulation of gridded TWT guns显示文摘	DIONNE N KRAHN H J HARPER R	1980	IEDM Tech Dig1980，，：	1

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