Progress of graphene growth on copper by chemical vapor deposition:Growth behavior and controlled synthesis

查看全文 作　　者：MA [1]LaiPeng;REN [1]WenCai;DONG [2]ZaiLi;LIU [2]LianQing;CHENG [1]HuiMing

机构地区：[1]Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;[2]State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China

出　　处：《Chinese Science Bulletin》索引2012年第57卷第23期,共5页

基　　金：supported by the National Natural Science Foundation of China(51102241);State Key Laboratory of Robotics(RLO201012) 摘　　要：Recently,chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene.In this paper,we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper,and then focus on the recent progress on the quality improvement,number of layers control and transfer-free growth of graphene.In the end,we attempt to analyze the possible development of CVD growth of graphene in future,including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders. 关键词：GRAPHENE controlled GROWTH chemical vapor DEPOSITION COPPER SUBSTRATE

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Progress of graphene growth on copper by chemical vapor deposition:Growth behavior and controlled synthesis

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