共被期刊论文引用了2次
您的检索式：您选中1篇文献正在查看引证文献汇总
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Lithium intercalation/de-intercalation behavior of a composite Sn/C thin film fabricated by magnetron sputtering显示文摘A tin film of 320 nm in thickness on Cu foil and its composite film with graphite of ~50 nm in thickness on it were fabricated by magnetron sputtering. The surface morphology, composition, surface distributions of alloy elements, and lithium intercalation/de-intercalation behaviors of the fabricated films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron probe microanalyzer (EPMA), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma atomic emission spectrometry (ICP), cyclic voltammetry (CV), and galvanostatic charge/discharge (GC) measurements. It is found that the lithium intercalation/de-intercalation behavior of the Sn film can be significantly improved by its composite with graphite. With cycling, the discharge capacity of the Sn film without composite changes from 570 mAh/g of the 2nd cycle to 270 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 90% and 95%. Nevertheless, the discharge capacity of the composite Sn/C film changes from 575 mAh/g of the 2nd cycle to 515 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 95% and 100%. The performance improvement of tin by its composite with graphite is ascribed to the retardation of the bulk tin cracking from volume change during lithium intercalation and de-intercalation, which leads to the pulverization of tin. | ZHAO Lingzhi HU Shejun LI Weishan LI Liming HOU Xianhua | 2008 | Rare Metals2008，27，5： | 8 |
| 2 | Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO_2 thin films显示文摘Polycrystalline SnO2 thin films were deposited on sapphire substrates at 450°C under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electri- cal properties of SnO2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak cen- tered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films. | ZHAO Songqing ZHOU Yueliang WANG Shufang ZHAO Kun HAN Peng | 2006 | Rare Metals2006，25，6： | 4 |
您所在的机构暂未开通此部分的功能，请联系管理员