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| 1 | Prototype of single-event effect localization system with CMOS pixel sensor显示文摘The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor(CMOS) pixel sensor, i.e., TopmetalM, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°, and the angular resolution was 0.6°. The prototype localized heavy ions with a position resolution of 3.4 μm. | Jun Liu Zhuo Zhou Dong Wang Shi-Qiang Zhou Xiang-Ming Sun Wei-Ping Ren Bi-Hui You Chao-Song Gao Le Xiao Ping Yang Di Guo Guang-Ming Huang Wei Zhou Cheng-Xin Zhao Min Wang | 2022 | Nuclear Science and Techniques2022，33，11： | 1 |
| 2 | Heavy ion‑induced MCUs in 28nm SRAM‑based FPGAs:upset proportions,classifications,and pattern shapes显示文摘For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based systems.Thus,both performing the worst-case irradiation tests to provide the actual MCU response of devices and proposing an effective MCU distinction method are urgently needed.In this study,high-and medium-energy heavy-ion irradiations for the configuration random-access memory of 28 nm FPGAs are performed.An MCU extraction method supported by theoretical predictions is proposed to study the MCU sizes,shapes,and frequencies in detail.Based on the extraction method,the different percentages,and orientations of the large MCUs in both the azimuth and zenith directions determine the worse irradiation response of the FPGAs.The extracted largest 9-bit MCUs indicate that high-energy heavy ions can induce more severe failures than medium-energy ones.The results show that both the use of high-energy heavy ions during MCU evaluations and effective protection for the application of high-density 28 nm FPGAs in space are extremely necessary. | Shuai Gao Xin‑Yu Li Shi‑Wei Zhao Ze He Bing Ye Li Cai You‑Mei Sun Guo‑Qing Xiao Chang Cai Jie Liu | 2022 | Nuclear Science and Techniques2022，33，12： | 1 |
| 3 | Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs显示文摘Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation environments.Hence,many investigations have been conducted using mediumenergy heavy ions to study the effects of MBU radiation.However,high-energy heavy ions(HEHIs)greatly affect the size and percentage of MBUs because their ionizationtrack structures differ from those of medium-energy heavy ions.In this study,the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly investigated.With the Geant4 calculation,more serious energy effects of HEHIs on MBU scales were successfully demonstrated.In addition,we identified worse MBU responses resulting from lowered voltages.The MBU orientation effect was observed in the radiation of different dimensions.The broadened ionization tracks for tilted tests in different dimensions could result in different MBU sizes.The results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than mediumenergy heavy ions with much higher linear energy transfer.Therefore,comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply highdensity 28 nm FPGAs in deep space exploration. | Shuai Gao Jin-Hu Yang Bing Ye Chang Cai Ze He Jie Liu Tian-Qi Liu Xiao-Yu Yan You-Mei Sun Guo-Qing Xiao | 2022 | Nuclear Science and Techniques2022，33，9： | 0 |
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