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| 1 | A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability显示文摘To improve the logic stability of conventional multi-valued logic(MVL) circuits designed with a GaNbased resonate tunneling diode(RTD), we proposed a GaN/InGaN/AlGaN multi-quantum well(MQW) RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green's function(NEGF) method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AIGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD_8 is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function. | Haipeng Zhang Qiang Zhang Mi Lin Weifeng Lü Zhonghai Zhang Jianling Bai Jian He Bin Wang Dejun Wang | 2018 | Journal of Semiconductors2018，39，7： | 1 |
| 2 | Improving the peak current density of resonant tunneling diode based on InP substrate显示文摘Resonant tunneling diodes(RTD)have the potential for compact and coherent terahertz(THz)sources operating at room temperature,but their low output power severely restricts their application in THz frequency range.In this paper,two methods are adopted to increase the peak current of RTD for enhancing its output power.First,different metal contact systems(including Pt/Ti/Pt/Au and Au Ge/Ni/Au)for RTD contact are introduced,and a higher current of RTD with Pt/Ti/Pt/Au contact demonstrates the superior contact characteristic of Pt/Ti/Pt/Au contact system.Second,the double barrier structure(DBS)of RTD is well designed to further improve the characteristic of RTD,and a high peak current of 154 kA/cm^2 is achieved at room temperature.The improved peak current is very beneficial for increasing the output power of RTD oscillator. | Zhiqiang Li Hailin Tang Haitao Liu Yi Liang Qian Li Ning An Jianping Zeng Wenjie Wang Yongzhong Xiong | 2017 | Journal of Semiconductors2017，38，6： | 1 |
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