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| 1 | 周期调制DFB半导体激光器的双辅助相移对空间烧孔效应的抑制作用(英文)显示文摘由于分布反馈武(DFB)半导体激光器具有结构简单、频谱稳定等优点,在光通信领域具有十分广泛的应用.传统的DFB激光器在大电流条件下容易产生空间烧孔效应,从而造成单模特性不稳定为了抑制空间烧孔效应,本文基于重构等效啁啾技术设计了具有双辅助相移的周期调制光栅结构,并从理论和实验两个方面进行了研究,理论仿真和实验结果吻合.男外仿真计算了激光器谐振腔中光场分布的平坦因子,利用双辅助相移周期调制光栅结构DFB激光器,其腔内光场分布平坦程度得到明显提高.实验结果表明:温度25℃,注入电流50~160mA时,激光器边模抑制比均超过35dB,单模特性保持稳宅因此,本文论述的DFB激光器对空间烧孔效应具有明显抑制作用. | 郭仁甲 郑俊守 张云山 施跃春 李连艳 仇伯仓 卢林林 陈向飞 | 2015 | Science Bulletin2015，60，11： | 3 |
| 2 | 分布反馈半导体激光器取样光栅特性分析显示文摘为了改善传统分布反馈半导体激光器的单模特性和因激光腔端面AR涂层而导致制造工艺复杂的情况,需要引入取样光栅,这是一种不同于均匀光栅、λ/4相移光栅、周期光栅、对称光栅和非对称光栅等的新结构光栅,其可沿着激光腔的特定区域(此区域包含光栅)进行耦合。另外,借助传输矩阵法得到耦合模式方程,建立起分布反馈半导体激光器的取样光栅结构模型。并且从耦合系数、平坦度、阈值等多个方面对构建的模型进行仿真对比。分析仿真结果可知,采样光栅的引入,使激光器无需对端面AR涂层,即可消除相移等随机变量对激光器的影响。并且,在新结构中,无需考虑光栅相移以及光栅的完整性,进一步降低了激光器制备的复杂性。 | 王文鑫 吕玉祥 | 2018 | 激光杂志2018，39，10： | 2 |
| 3 | Transient mode competition in directly modulated DFB semiconductor laser显示文摘A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift(EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between ?1st order(main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent ? phase shift(?-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the ?1st order wavelength is around the gain peak, while the stable single longitudinal mode(SLM) operation of the ?1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation(32 d B extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. | XIAO RuLei SHI YueChun ZHENG JiLin ZHANG YunShan ZHENG JunShou CHEN XiangFei | 2015 | Science China(Physics,Mechanics & Astronomy)2015，58，12： | 1 |
| 4 | 全息曝光实现的20波长DFB半导体激光器阵列显示文摘报道了一种基于全息曝光技术实现的20波长分布反馈式(DFB)半导体激光器阵列。传统的DFB半导体激光器光栅一般是利用电子束曝光的方式来实现,这种方式精度较高,然而成本昂贵并且非常耗时,不适合大规模生产应用,而全息方式制作容易,成本很低,适合大规模生产应用。实验结果表明,利用全息曝光技术实现的DFB激光器阵列具有良好的光电特性,激光器阵列的波长偏差在-0.5 nm至0.45 nm,阈值电流在13m A至17 m A,斜效率为0.4 W/A;50 m A偏置电流下,边模抑制比都大于40 d B。 | 卢林林 | 2017 | 激光杂志2017，38，1： | 0 |
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