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| 1 | Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si显示文摘The carrier mobility of Si material can be enhanced under strain,and the stress magnitude can be measured by the Raman spectrum.In this paper,we aim to study the penetration depths into biaxially-strained Si materials at various Raman excitation wavelengths and the stress model corresponding to Raman spectrum in biaxially-strained Si.The experimental results show that it is best to use 325 nm excitation to measure the material stress in the top strained Si layer,and that one must pay attention to the distortion of the buffer layers on measuring results while 514 nm excitation is also measurable.Moreover,we established the stress model for Raman spectrum of biaxially-strained Si based on the Secular equation.One can obtain the stress magnitude in biaxially-strained Si by the model,as long as the results of the Raman spectrum are given.Our quantitative results can provide valuable references for stress analysis on strained materials. | SONG JianJun YANG Chao HU HuiYong DAI XianYing WANG Cheng ZHANG HeMing | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，11： | 3 |
| 2 | Scattering mechanism of hole in(001),(101),(111) biaxially-strained Si and Si_(1-x)Ge_x materials显示文摘Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism related to stress and orientation in Si-based strained materials was studied in-depth. The results show that:(1) the total hole scattering rates in Si-based strained materials decrease obviously under strain;(2)the turn is Si/(111)Si1 xGex > Si/(101)Si1 xGex > Si1 xGex/(111)Si > Si1 xGex/(101)Si > Si/(001)Si1 xGex> Si1 xGex/(001)Si when Ge fraction is about 0.2;(3) the decreasing total hole scattering rates of in strained materials with the increasing stress is mainly caused the decreasing acoustic phonon scattering rate under strain.The theoretical conclusions obtained could provide important references for researching the hole mobility and the understanding of Si-based materials or other physical strained materials. | 赵丽霞 杨超 朱贺 宋建军 | 2015 | Journal of Semiconductors2015，36，7： | 0 |
| 3 | 双轴压应力Ge材料价带物理参量计算显示文摘应变Ge材料载流子迁移率高,且与硅工艺兼容,在硅基CMOS中的应用潜力大。能带结构是深入研究应变Ge材料基本属性,设计高速/高性能CMOS器件的重要理论依据。为此,本文采用结合形变势理论的kp微扰法,分析了(001)双轴压应力Ge材料价带结构、轻重空穴带Γ点能级及轻重空穴带间分裂能等价带物理参量与应力的理论关系,获得有实用价值的相关结论。 | 孟江 乔丽萍 李淑萍 | 2015 | 固体电子学研究与进展2015，35，1： | 0 |
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