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| 1 | 遗传算法优化BP神经网络的大功率LED结温预测显示文摘将遗传算法(GA)与BP神经网络相结合,对研发的120W LED双进双出的射流冲击水冷散热系统中LED阵列的结温进行预测。采用GA优化BP网络的权值和阈值,利用BP算法训练网络,改善了单独使用BP网络容易陷入局部极小值和收敛速度慢的缺点。并且在训练过程中为了使网络输出有足够长的空间,改进了GA的数据处理。结果表明,经GA优化的BP神经网络较使用Levenberg-Marquardt(LM)算法优化的BP神经网络的大功率LED结温预测精确度提高了14.14%,且预测效果较稳定。GA和BP神经网络相结合的结温预测模型较传统的结温测量方法更能掌握散热结构设计的主动性,对大功率LED寿命的延长有较高的实用价值。 | 王志斌 孔亚楠 刘永成 张骞 | 2014 | 光电子.激光2014，25，7： | 24 |
| 2 | Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime显示文摘The authors have carried out the large-signal characterization of silicon-based double-drift region(DDR) impact avalanche transit time(IMPATT) devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation.The effect of band-to-band tunneling as well as parasitic series resistance on the large-signal properties of DDR Si IMPATTs have also been studied at different mm-wave and THz frequencies.Large-signal simulation results show that DDR Si IMPATT is capable of delivering peak RF power of 633.69mW with 7.95% conversion efficiency at 94GHz for 50% voltage modulation,whereas peak RF power output and efficiency fall to 81.08 mW and 2.01% respectively at 0.5 THz for same voltage modulation.The simulation results are compared with the experimental results and are found to be in close agreement. | Aritra Acharyya Jit Chakraborty Kausik Das Subir Datta Pritam De Suranjana Banerjee J.P.Banerjee | 2013 | Journal of Semiconductors2013，34，10： | 2 |
| 3 | Large-signal characterizations of DDR IMPATT devices based on group Ⅲ–Ⅴ semiconductors at millimeter-wave and terahertz frequencies显示文摘Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzite(Wz) GaN, GaAs and InP have been carried out at both millimeter-wave(mm-wave) and terahertz(THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation(NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials(i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies. | Aritra Acharyya Aliva Mallik Debopriya Banerjee Suman Ganguli Arindam Das Sudeepto Dasgupta J.P.Banerjee | 2014 | Journal of Semiconductors2014，35，8： | 1 |
| 4 | Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes显示文摘The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this paper.The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited(NSVE)large-signal simulation technique developed by the authors,which is based on the quantum-corrected drift-diffusion(QCDD)model.Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed.Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques,which will be highly useful for optimizing the thermal design of the oscillators.Finally,the simulated results are found to be in close agreement with the experimentally measured data. | S.J.Mukhopadhyay Prajukta Mukherjee Aritra Acharyya Monojit Mitra | 2020 | Journal of Semiconductors2020，41，3： | 0 |
| 5 | Hot electron transport in wurtzite-GaN:effects of temperature and doping concentration显示文摘The hot electron transport in wurtzite phase gallium nitride(Wz-GaN) has been studied in this paper. An analytical expression of electron drift velocity under the condition of impact ionization has been developed by considering all major scattering mechanisms such as deformation potential acoustic phonon scattering, piezoelectric acoustic phonon scattering, optical phonon scattering, electron-electron scattering and ionizing scattering. Numerical calculations show that electron drift velocity in Wz-GaN saturates at 1.44 × 10~5 m/s at room temperature for the electron concentration of 10^(22) m^(-3). The effects of temperature and doping concentration on the hot electron drift velocity in Wz-GaN have also been studied. Results show that the saturation electron drift velocity varies from 1.91 × 10~5-0.77 × 10~5 m/s for the change in temperature within the range of 10-1000 K, for the electron concentration of 10^(22) m^(-3); whereas the same varies from 1.44 x 105-0.91 x 105 m/s at 300 K for the variation in the electron concentration within the range of 10^(22)-10^(25) m^(-3). The numerically calculated results have been compared with the Monte Carlo simulated results and experimental data reported earlier, and those are found to be in good agreement. | Aritra Acharyya | 2018 | Journal of Semiconductors2018，39，7： | 0 |
| 6 | In0.17Al0.83N/GaN IMPATT二极管的温度特性显示文摘为研究碰撞电离雪崩渡越时间(IMPATT)二极管的温度特性,采用Sentaurus软件设计了晶格匹配的In0.17Al0.83N/GaN异质结IMPATT二极管二维结构,利用漂移-扩散模型研究了温度对二极管直流及高频特性的影响,并与GaN同质结IMPATT二极管的温度特性进行了比较。结果表明,温度升高时IMPATT二极管的击穿电压增大,使异质结和同质结IMPATT二极管的射频输出功率密度分别由300 K时的1.62 MW/cm2和1.24 MW/cm2增大至500 K时的1.79 MW/cm2和1.42 MW/cm2。温度升高时二极管雪崩区宽度增大,导致异质结和同质结IMPATT二极管的直流-射频转换效率分别由300 K时的15.4%和12.1%降低至500 K时的14.2%和10.7%。相比之下,In0.17Al0.83N/GaN异质结IMPATT二极管更适合高温工作,取得的研究数据可用于指导毫米波大功率InAlN/GaN异质结IMPATT二极管的设计。 | 李秀圣 曹连振 | 2020 | 半导体技术2020，45，12： | 0 |
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