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		题名	作者	年代	出处	被引量
	1	Large-signal characterizations of DDR IMPATT devices based on group Ⅲ–Ⅴ semiconductors at millimeter-wave and terahertz frequencies显示文摘Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzite(Wz) GaN, GaAs and InP have been carried out at both millimeter-wave(mm-wave) and terahertz(THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation(NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials(i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.	Aritra Acharyya Aliva Mallik Debopriya Banerjee Suman Ganguli Arindam Das Sudeepto Dasgupta J.P.Banerjee	2014	Journal of Semiconductors2014，35，8：	1
	2	Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices显示文摘An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region(DDR) impact avalanche transit time(IMPATT) devices operating at both millimetre-wave(mm-wave) and terahertz(THz) frequencies. A rigorous large-signal(L-S) simulation based on the non-sinusoidal voltage excitation(NSVE) model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%voltagemodulation.AcomparativestudyofDDRIMPATTsbasedon diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.	Aritra Acharyya Suranjana Banerjee J.P.Banerjee	2014	Journal of Semiconductors2014，35，3：	0

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