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| 1 | Photonic integrated technology for multi-wavelength laser emission显示文摘We summarized the design, fabrication challenges and important technologies for multi-wavelength laser transmitting photonic integration. Technologies discussed include multi-wavelength laser arrays, monolithic integration and modularizing coupling and packaging. Fabrication technique requirements have significantly declined with the rise of reconstruction-equivalent-chirp and second nanoimprint mask technologies. The monolithic integration problem between active and passive waveguides can be overcome with Butt-joint and InP array waveguide grating technologies. The dynamic characteristics of multi-factors will be simultaneously measured with multi-port analyzing modules. The performance of photonic integration chips is significantly improved with the autoecious factors compensation packaging technique. | CHEN XiangFei LIU Wen AN JunMing LIU Yu XU Kun WANG Xin LIU JianGuo JI YueFeng ZHU NingHua | 2011 | Chinese Science Bulletin2011，56，28： | 9 |
| 2 | 纳米压印工艺制作DFB激光器的可靠性研究显示文摘利用光荧光谱及X射线双晶衍射研究了纳米压印工艺对半导体外延材料的影响。利用纳米压印工艺制作了1.55μm通信用分布反馈(DFB)半导体激光器,并对制作的器件进行了老化寿命试验。实验结果表明,采用软模版压印并不会劣化半导体外延材料的特性。制作的半导体激光器预期寿命与普通双光束曝光法制得的器件预期相当,表明纳米压印工艺制作半导体激光器是可靠的。 | 赵建宜 陈鑫 周宁 曹明德 黄晓东 刘文 | 2014 | 光学学报2014，34，2： | 6 |
| 3 | 周期调制DFB半导体激光器的双辅助相移对空间烧孔效应的抑制作用(英文)显示文摘由于分布反馈武(DFB)半导体激光器具有结构简单、频谱稳定等优点,在光通信领域具有十分广泛的应用.传统的DFB激光器在大电流条件下容易产生空间烧孔效应,从而造成单模特性不稳定为了抑制空间烧孔效应,本文基于重构等效啁啾技术设计了具有双辅助相移的周期调制光栅结构,并从理论和实验两个方面进行了研究,理论仿真和实验结果吻合.男外仿真计算了激光器谐振腔中光场分布的平坦因子,利用双辅助相移周期调制光栅结构DFB激光器,其腔内光场分布平坦程度得到明显提高.实验结果表明:温度25℃,注入电流50~160mA时,激光器边模抑制比均超过35dB,单模特性保持稳宅因此,本文论述的DFB激光器对空间烧孔效应具有明显抑制作用. | 郭仁甲 郑俊守 张云山 施跃春 李连艳 仇伯仓 卢林林 陈向飞 | 2015 | Science Bulletin2015，60，11： | 3 |
| 4 | Transient mode competition in directly modulated DFB semiconductor laser显示文摘A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift(EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between ?1st order(main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent ? phase shift(?-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the ?1st order wavelength is around the gain peak, while the stable single longitudinal mode(SLM) operation of the ?1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation(32 d B extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. | XIAO RuLei SHI YueChun ZHENG JiLin ZHANG YunShan ZHENG JunShou CHEN XiangFei | 2015 | Science China(Physics,Mechanics & Astronomy)2015，58，12： | 1 |
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