维普期刊资源整合服务平台（V6.5）

80篇 您的检索式：作者名="walukiewicz W"

选中清除导出查看参考文献查看引证文献引用追踪共4页首页上一页第1页下一页末页 /4 跳转

	题名	作者	年代	出处	被引量
1	On the Crystalline Structure, Stoichiometry and Band Gap of InN Thin Films 显示文摘	Yu K M Liliental-Weber Z Walukiewicz W	2005	Appl Phys Lett2005，86，07：	1
2	Derivative surface photovoltage spectroscopy:a new approach to the study of absorption in semiconductors:GaAs显示文摘	Lagowski J Walukiewicz W Sulsarczuk M M G	1979	J Appl Phys1979，50，7：	1
3	Nature of room-temperature photoluminescence in ZnO显示文摘	Shan W walukiewicz W Ager III J W	2005	Appl Phys Lett2005，，86：	1
4	Diluted II-VI oxide semiconductors with multiple band gaps显示文摘	YU K M WALUKIEWICZ W WU J	2003	Phys Rev Lett2003，91，24：	1
5	Band anticrossing in GaInNAs alloys 显示文摘	SHAN W WALUKIEWICZ W AGER III J	1999	Physical Review Letters1999，82，6：	1
6	Electron mobility in A1x Ga1-x N/GaN heterostructures显示文摘	Hsu L Walukiewicz W	1997	Phys Rev B1997，56，：	1
7	Superior radiation resistance of In1-x GaiN alloys:full-solar-spectrum photovoltaic material system 显示文摘	WU J WALUKIEWICZ W YU K M	2003	J Appl Phys2003，94，10：	1
8	Effects of electron concentration on the optical absorption edge of InN 显示文摘	WUJ WALUKIEWICZ W LI S X	2004	Appl Physics Lett2004，84，15：	1
9	Unusual properties of the fundamental band gap of InN显示文摘	WU J WALUKIEWICZ W YU K M	2002	Applied Physics Letters2002，80，21：	1
10	Raman Spectroscopy and Time-resolved Photoluminescence of BN and BxCyNz Nanotubes显示文摘	Wu J Han W Q Walukiewicz W	2004	Nano Letters2004，4，4：	1
11	Small band gap bowing in In1-xGaxN alloys 显示文摘	WU J WALUKIEWICZ W LU H	2002	Appl Phys Lett2002，80，25：	1
12	Effects of the Narrow Band Gap on the Properties on InN显示文摘	Wu J Walukiewicz W Shan W	2002	Physical Review B2002，15，：	1
13	Interaction of localized electronic states with the conduction band:band anticrossing in II-VI semiconductor ternaries显示文摘	WALUKIEWICZ W SHAN W YU K M	2000	Phys Rev Lett2000，85，7：	1
14	Diluted II-VI oxide semiconductors with multiple band gaps显示文摘	YU K M WALUKIEWICZ W WU J	2003	Physical Review Letters2003，91，24：	1
15	Multi-band GaNAsP quaternary alloys显示文摘	YU K M WALUKIEWICZ W AGER J W	2006	Applied Physics Let-ters2006，88，9：	1
16	Optical properties of InxGa1- x N alloys grown by metalorga- nic chemical vapor deposition 显示文摘	SHAN W WALUKIEWICZ W HALLER E E	1998	J Appl Phys1998，84，8：	1
17	Small band gap bowing in In1-xGaxN alloys显示文摘	WU J WALUKIEWICZ W LU H	2002	Appl Phys Lett2002，80，25：	1
18	Diluted II-VI Oxide Semiconductors with Multiple Band Gaps显示文摘	W Walukiewicz K M Yu	2003	Phys Rev Lett2003，91，24：	1
19	Diluted Ⅱ-Ⅵ oxide semiconductors with multiple band gaps 显示文摘	Yu K M Walukiewicz W Wu J	2003	Phys Rev Lea2003，91，24：	1
20	Unusual properties of the fundamental band gap of InN显示文摘	W Walukiewicz K M Yu	2002	Appl Phys Lett2002，80，21：	1

返回顶部每页显示：

共4页首页上一页第1页下一页末页 /4 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示