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		题名	作者	年代	出处	被引量
	1	Oxidation Mechanisms in MgO-C Refractories显示文摘An investigation on the oxidation mechanism of the graphite in the MgO-C refractory materials is helpful to improving both the quality of these materials and to preventing and/or lowering of the adverse effects of the high-temperature oxidation. In this research, the oxidation behavior of the MgO-C refractories containing 5~20 wt% graphite was studied via weight-loss method. Atmospheric air was used for oxidation at temperatures ranging from 900℃ to 1300°C and the experimental data were compared with those obtained from the dimensionless kinetic equations of the shrinking core model, in order to determine the oxidation mechanisms of the refractories. The best fit was achieved with the porous layer diffusion control regime. Oxidation mechanism tends, however, to slightly deviate from pure pore diffusion control to pore diffusion-external gas transfer regime in the samples having more graphite contents (e.g. 20%).	B.Hashemi Z.Ali Nemati S.K.Sadrnezhaad	2004	China's Refractories2004，13，2：	1
	2	Effect of supplemental pre‐operative fluid on postoperative nausea and vomiting*显示文摘	S. Z.Ali A.Taguchi B.Holtmann A.Kurz	2003	Anaesthesia2003，，8：	1
	3	Inflammatory pseudotumor: A diagnostic dilemma in cytopathology显示文摘	Gregory A.Hosler David M.Steinberg SheilaSheth Ulrike M.Hamper Yener S.Erozan Syed Z.Ali	2004	Diagn. Cytopathol2004，，4：	1
	4	New Bi-metallic Single Source Precursors for the Deposition of Thin Films of Semiconductor Ceramics显示文摘为薄 filmsof 的免职的稳定的二进制单身的来源先锋( SSP )作文 SnO-GeO 的陶器的半导体被靠近的电路化学药品 vapourdeposition ( CCCVD )综合 method.Elemental 分析和分光镜的技术习惯于 characterizethe precursors.Scanning 电子显微镜学( SEM )和精力散光谱学(版本) employedto 描绘薄 films.Resistivity 大小被进行出现电影 areof 半导体的自然。	U.Salma M.Mazhar J.I.Akhter Z.Ali	2007	Journal of Materials Science & Technology2007，23，2：	0

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