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10篇 您的检索式:作者名="YAEGASHI O"
    题名 作者 年代 出处 被引量
1Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating 显示文摘Wang Z L Yaegashi O Sakane H 2003J Appl Phys2003,94,7:1
2Bottom-up fill of copper in deep submicrometer holes by electroless plating 显示文摘SHINGUBARA S WANG Z L YAEGASHI O 2004Electrochemical and Solid-State Letters2004,7,6:1
3Bottom-up copper fill with addition of mercapto alkyl carboxylic acid in electroless显示文摘Wang Z Yaegashi O Sakaue H 2006Electrochimica Acta2006,51,:1
4Bottom-up fill of copper in deep sub micrometer holes by electro less plating显示文摘SHINGUBARA S WANG Z YAEGASHI O 2004Electrochemical and Solid-State Letters2004,7,6:1
5Bottom-up copper fill with addition of Mercator alkyl earboxylic acid in electro less显示文摘WANG Z YAEGASHI O SAKAUE H 2006Electrochemical Acts2006,,51:1
6Bottom-up fill for sub micrometer copper via holes of ULSI by electro less plating显示文摘WANG Z YAEGASHI O SAKAUE H 2004Electrochemical and Solid-State Letters2004,151,12:1
7Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating 显示文摘WANG Z L YAEGASHI O SAKAUE H 2004J Electrochem Soc2004,151,12:1
8Bottom-up fill of copper in deep submicrometer holes by electroless plating 显示文摘SHINGUBARA S WANG Z L YAEGASHI O 2004Electrochem Solid-State Lett2004,7,6:1
9Effect of additives on hole filling characteristics of electroless copper plating 显示文摘WANG Z L YAEGASHI O SAKAUE H 2004Jpn J Appl Phys2004,43,10:1
10Bottom-up fill for submicrometer copper via holes of ULSIS by electro- less plating 显示文摘Wang Z L Yaegashi O Sakaue H 2004Electrochem Soc2004,151,12:1
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