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| 1 | F掺杂的BN纳米管及电导特性显示文摘利用一种新颖的催化生长方法,在生长BN纳米管的过程中直接引入F原子,获得了均匀F掺杂的BN纳米管.高分辨透射电子显微镜研究表明,构成BN纳米管的六元环由于F掺杂而被严重扭曲,纳米管壁由一些高度卷曲的连续片层构成.电学性质测量表明,相对于无掺杂的BN纳米管而言,F掺杂BN纳米管的电导显著增加. | 黄阳 岳双林 顾长志 C.C.Tang Y.Bando F.F.Xu D.Golberg | 2005 | 物理2005，34，11： | 2 |
| 2 | Growth of Wurtzite ZnS Micrometer‐Sized Diskettes and Nanoribbon Arrays with Improved Luminescence显示文摘 | J.Hu Y.Bando J.Zhan D.Golberg | 2005 | Adv Funct Mater2005，，5： | 1 |
| 3 | Bright visible photoluminescence from silica nanotube flakes prepared by the sol-gel template method显示文摘 | Ming Zhang Eugenia Ciocan Y.Bando | | 0，，03： | 1 |
| 4 | Controlled Growth and Field-emission Application of 1D ZnS Nanostructures显示文摘1 Results One-dimensional (1D) nanostructures have recently stimulated great interest due to their potential value for understanding fundamental physical concepts and for applications in constructing nanoscale electric and optoelectronic devices since the discovery of carbon nanotubes[1]. ZnS is one of the first semiconductors discovered and probably one of the most important materials in the electronics industry with a wide range of applications[2]. Controllable growth of nanostructures is a crucial is... | X.S.Fang Y.Bando D.Golberg | 2007 | 复旦学报(自然科学版)2007，46，5： | 0 |
| 5 | The Novel Semiconductor Nanowire Heterostructures显示文摘1 Results If one-dimensional heterostructures with a well-defined compositional profile along the wire radial or axial direction can be realized within semiconductor nanowires, new nano-electronic devices,such as nano-waveguide and nano-capcipator, might be obtained. Here,we report the novel semiconducting nanowire heterostructures:(1) Si/ZnS side-to-side biaxial nanowires and ZnS/Si/ZnS sandwich-like triaxial nanowires[1],(2) Ga-Mg3N2 and Ga-ZnS metal-semiconductor nanowire heterojunctions[2-3]and (3) ... | J.Q.Hu Y.Bando J.H.Zhan D.Golberg | 2007 | 复旦学报(自然科学版)2007，46，5： | 0 |
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