| 1 | Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor显示文摘Surface acoustic wave(SAW)resonators with an ultrahigh Q-factor are designed and fabricated on silicon-based gallium nitride(GaN/Si).The temperature-dependent performance is characterized over a wide range,from 10 to 500 K.Finite element analysis is employed to guide the design of the SAW resonator from indications of the Rayleigh mode and weak propagation direction dependence of SAW in the c-plane of GaN/Si.The SAW resonator with 100 pairs of interdigital transducers(IDT),100 pairs of grating reflectors(GR)for each side,aperture size of 80μm,metallization ratio of 0.5,and electrode width of 500 nm resonates at 1.9133 GHz accordingly with an ultrahigh Q-factor of 7622 at room temperature,which contributes the f_(r)×Q_(r),up to 14.583×10^(12)Hz.A resonator operating over 10 to 500 K indicates an approximately linear decreasing temperature dependence above 280 K while being approximately constant below 40 K.The fitting to resonator characteristics using the modified Butterworth Van Dyke(mBVD)model reveals a reduction in both the electrode and mechanical losses while worsening the dielectric loss with cooling down. | Guofang YU Renrong LIANG Haiming ZHAO Lei XIAO Jie CUI Yue ZHAO Wenpu CUI Jing WANG Jun XU Jun FU Tianling REN | 2024 | Science China(Information Sciences)2024，67，2： | 0 |
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