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| 1 | Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C_(fp)显示文摘In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good. | WEMBE TAFO Evariste SU Hong GAO Yanni WU Ming | 2008 | Nuclear Science and Techniques2008，19，4： | 3 |
| 2 | 基于DMOS管的电荷灵敏前置放大器设计显示文摘提出了一种由DMOS场效应管构成的电荷灵敏前置放大器,可用于硅,Si(Li),CdZnTe及CsI探测器。该前置放大器采用不同于传统的阻容反馈式的电路结构,完全使用MOS管搭建,该前放的设计完成为设计实现ASIC电路准备了技术基础。由Multisi m仿真结果看出该电荷灵敏前置放大器输出信号上升时间小于15ns,并且具有很好的稳定性。 | 高艳妮 苏弘 WEMBE TAFO Evariste | 2010 | 核电子学与探测技术2010，30，1： | 3 |
| 3 | Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector显示文摘The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good. | WEMBE TAFO Evariste SU Hong QIAN Yi KONG Jie WANG Tongxi | 2010 | Nuclear Science and Techniques2010，21，5： | 2 |
| 4 | A low noise charge sensitive preamplifier with switch control feedback resistance显示文摘In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good. | WEMBE TAFO Evariste SU Hong PENG Yu WU Ming QIAN Yi | 2008 | Nuclear Science and Techniques2008，19，1： | 2 |
| 5 | 查看详情显示文摘 | Wembe E T Yamapi R | | 0，，： | 1 |
| 6 | 用于粒子探测器的CMOS FET采样保持电路的设计与仿真(英文)显示文摘介绍了一个峰保持电路。该电路适用于silicon strip,Si(Li),CdZn Te and CsI等探测器,实现采样-保持功能。已成功进行了基于CMOSFET的采样-保持电路的设计和仿真,通过使用Proteus的PSPICE仿真器和BSIMV3.3模型参数完成了电路性能的仿真。同时,实现了采样时间可在60ns到4.44s范围内进行选择,该电路具有较好的线性。 | WEMBE TAFO Evariste 苏弘 千奕 周朝阳 王同喜 | 2010 | 原子核物理评论2010，27，4： | 0 |
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