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| 1 | Improving the electrical performance of resistive switching memory using doping technology显示文摘In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM. | WANG Yan LIU Oi LU HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming | 2012 | Chinese Science Bulletin2012，57，11： | 6 |
| 2 | Post COVID-19 burden:focus on the short-term condition显示文摘The catastrophic pandemic of the coronavirus disease 2019(COVID-19)has caused serious harm to human life and global social economy.As of June 13,2022,there were more than 530 million confirmed cases of COVID-19 and over 6.3 million deaths[1].During the past 2 years,global studies on prevention and therapies for COVID-19 have achieved a series of promising findings,including antiviral drugs(Remdesivir,Molnupiravir,Paxlovid)and monoclonal antibodies(Bamlanivimab and Etesevimab,Sotrovimab,Casirivimab and Imdevimab)[2]. | Fengwen Yang Bo Pang Xinyao Jin Zhe Chen Wentai Pang Qingquan Liu Junhua Zhang Boli Zhang | 2022 | Acupuncture and Herbal Medicine2022，2，3： | 2 |
| 3 | Approaches for improving the performance of filament-type resistive switching memory显示文摘Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced. | LIAN WenTai LONG ShiBing LU HangBing LIU Qi LI YingTao ZHANG Sen WANG Yan HUO ZongLiang DAI YueHua CHEN JunNing LIU Ming | 2011 | Chinese Science Bulletin2011，56，4： | 2 |
| 4 | An Efficient Inductive Power Link Design for Retinal Prosthesis显示文摘 | Kendir G A Liu Wentai Bashirullah R | 2004 | IEEE Transactions on Circuits and Systems2004，60，4： | 1 |
| 5 | Design and Perform- ance of a Wideband Sub-sampling Front-end for Mtdti- standard Radios 显示文摘 | YUCE M TEKIN A WENTAI LIU | 2008 | AEU-Intemational Journal of Elec- tronics and Communications2008，62，1： | 1 |
| 6 | An optimal design methodology for inductive power link with Class-E amplifier显示文摘 | Kendir G A Liu Wentai Wang Guoxing | 2005 | IEEE Transactions on Circuits and Systems I:Regular Papers2005，52，5： | 1 |
| 7 | Design and analysis of an adaptive transcutaneous power telemetry for biomedical implants显示文摘 | Wang Guoxing Liu Wentai Sivaprakasam M | 2005 | IEEE Transactions on Circuits and Systems Ⅰ:Regular Papers2005，52，10： | 1 |
| 8 | An optimal design methodology for inductive power link with Class-E amplifier显示文摘 | Kendir GA Liu Wentai Wang Guoxing | 2005 | IEEE Transactions on Circuits and Systems I:Regular Papers2005，52，5： | 1 |
| 9 | A neurostimulus chip with telemetry unit for retinal prosthetic device显示文摘 | Liu Wentai Vichienchom K Clements M | 2000 | IEEE Journal of Solid-State Circuits2000，35，10： | 1 |
| 10 | Implantable biomimetic microolectronic systems design显示文摘 | Liu Wentai Sivaprakasam M Wang Guoxing | 2005 | IEEE Engineering in Medicine and Biology Magazine2005，24，5： | 1 |
| 11 | A non-coherent DPSK data receiver with interference cancellation for dual-band transcutaneous telemetries显示文摘 | Zhou Mingcui Yuce MR Liu Wentai | 2008 | IEEE Journal of Solid-State Circuits2008，43，9： | 1 |
| 12 | Progress in rectifying-based RRAM passive crossbar array显示文摘Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed. | ZHANG KangWei LONG ShiBing LIU Qi LUE HangBing LI YingTao WANG Yan LIAN WenTai WANG Ming ZHANG Sen LIU Ming | 2011 | Science China(Technological Sciences)2011，54，4： | 1 |
| 13 | A variable range bi-phasic current stimulus driver circuitry for an implantable retinal prosthetic device 显示文摘 | SIVAPRAKASAM M WENTAI LIU HUMAYUN M S | 2005 | Solid-state Circuit2005，40，3： | 1 |
| 14 | Crosstalk in polymer microelectrode arrays显示文摘Thin-film polymer microelectrcxje arrays(MEAs)facilitate the high-resolution neural recording with its superior mechanical compliance.However,the densely packed electrodes and interconnects along with the ultra-thin polymeric encapsulation/substrate layers give rise to non-negligible crosstalk,which could result in severe interference in the neural signal recording.Due to the lack of standardized characterization or modeling of crosstalk in neural electrode arrays,to date,crosstalk in polymer MEAs remains poorly understood.In this work,the crosstalk between two adjacent polymer microelectrodes is measured experimentally and modeled using equivalent circuits.Importantly,this study demonstrated a two-well measuring platform and systematically characterized the crosstalk in polymer microelectrodes with true isolation of the victim channel and precise control of its grounding condition.A simple,unified equation from detailed circuit modeling was proposed to calculate the crosstalk in different environments.Finite element analysis(FEA)analysis was conducted further to explore the crosstalk in more aggressively scaled polymer electrode threads.In addition to standardizing neural electrode array crosstalk characterization,this study not only reveals the dependence of the crosstalk in polymer MEAs on a variety of key device parameters but also provides general guidelines for the design of thin polymer MEAs for high-quality neural signal recording. | Yi Qiang Wen Gu Zehua Liu Shanchuan Liang Jae Hyeon Ryu Kyung Jin Seo Wentai Liu Hui Fang | 2021 | Nano Research2021，14，9： | 0 |
| 15 | Improving superficial microstructure and properties of the laser-processed ultrathin kerf in Ti-6Al-4V alloy by water-jet guiding显示文摘In the present research,the gas-assisted laser(GAL)and water-jet guided laser(WGL)processing technologies were applied to machine the ultrathin kerf in the wrought Ti-6Al-4V alloy.The microstructure,microhardness,and wear properties of the superficial layer were investigated.The results reveal that the GAL processing could machine the kerf with a high depth-to-width ratio of 12–15,but the increased processing times enhance the depth little.Due to the oxygen entrainment and relatively low heat and mass transferring efficiency,the assisted gas promotes the formation of a scaled recast layer containingβ-Ti phase and oxides,which increases the roughness to 20μm.The WGL processed kerf has a low depth-to-width ratio with a value of 1.9–2.5 and the depth could be increased by increasing the WGL processing times.With the assistance of the water jet,the remelted debris and heat could be eliminated immediately,which restrains the formation of the recast layer and heat-affected zone.The ultrathin oxide outer layer with hundreds of nanometers and ultrafineα-Ti grain inner layer are formed on the surface,which decreases the roughness to 12μm.Compared with the as-received Ti-6Al-4V alloy,the microhardness of GAL processed kerf surface is increased to 382.8 HV accompanied by residual tensile stress,while the microhardness of WGL processed kerf surface is increased to 481.6 HV accompanying with residual compressive stress.In addition,the GAL processing increases the wear rate at room temperature but decreases the wear rate at high temperatures.Comparatively,the WGL processing decreases the wear rate at room and high temperatures,simultaneously.Such wear behaviors could be ascribed to their different superficial microstructures and phase constituents. | Yang Chao Yuezhuan Liu Zifa Xu Weixin Xie Li Zhang Wentai Ouyang Haichen Wu Zebin Pan Junke Jiao Shujun Li Guangyi Zhang Wenwu Zhang Liyuan Sheng | 2023 | Journal of Materials Science & Technology2023，，25： | 0 |
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