| 1 | The influence of impurity on the critical thickness of the CeO_2 buffer layer for coated conductors显示文摘The lattice parameters, band structure, density of state and elastic constant of RE-doped CeO2 (RE=Sm, Gd, Dy), the buffer material for coated HTS conductors, are calculated using the plane-wave method with pseudopotentials based on the density functional theory (DFT) of first-principle. The rule and mechanism of the effect of rare earth impurity on the critical thickness of the CeO2 buffer layer are investigated. It is found that, in the range of the calculation, the changes of the lattice volume V and elastic constant E of CeO2 with the impurity are mainly determined by the increased electrons ne of the system. The relationship of the elastic constant E and increased electrons ne is established. It is indicated that the critical thickness of the CeO2 single buffer layer doped with Sm, Gd, and Dy may be enhanced by 22%, 43% and 33%, respectively. | PAN Min1, HUANG Zheng2, MA HuanFeng2, QIANG WeiRong2, WEI LianFu1, WANG Long2 & ZHAO Yong1,3 1 Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R&D Center (SRDC), Southwest Jiaotong University, Chengdu 610031, China 2 School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China 3 Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW, Australia | 2009 | Science China(Physics,Mechanics & Astronomy)2009，52，7： | 3 |
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