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		题名	作者	年代	出处	被引量
	1	Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm显示文摘We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes(LEDs)emitting at 232 nm entirely grown by metalorganic vapor phase epitaxy(MOVPE).A GaN:Si interlayer was embedded into a highly Mg-and Si-doped Al_(0.87)Ga_(0.13)N tunnel junction to enable polarization field enhanced tunneling.The LEDs exhibit an on-wafer integrated emission power of 77μWat 5 mA,which correlates to an external quantum efficiency(EQE)of 0.29%with 45μWemitted through the bottom sapphire substrate and 32μW emitted through the transparent top surface.After depositing a highly reflective aluminum reflector,a maximum emission power of 1.73 mW was achieved at 100 mA under pulsed mode operation with a maximum EQE of 0.35%as collected through the bottom substrate.	FRANK MEHNKE CHRISTIAN KUHN MARTIN GUTTMANN LUCA SULMONI VERENA MONTAG JOHANNES GLAAB TIM WERNICKE MICHAEL KNEISSL	2021	Photonics Research2021，9，6：	0

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