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21篇 您的检索式：作者名="Terman L M"

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	题名	作者	年代	出处	被引量
1	A two-stage weighted capacitor network for D/A-A/D conversion显示文摘	Yee Y S Terman L M Heller L G	1979	IEEE Journal of Solid-state Circuits1979，14，4：	1
2	An investigation of surface states at a silicon/ silicon oxide interface employing metal-oxide-silicon diodes 显示文摘	TERMAN L M	1962	Solid-State Electronics1962，5，5：	1
3	A two- stage weighted capacitor network for D/A-A/D conversion 显示文摘	YEEY S TERMAN L M HELLER L G	1979	IEEE J Sol Sta Circ1979，14，4：	1
4	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes显示文摘	TERMAN L M	1962	Solid-State Electronics1962，5，5：	1
5	An investigation of surface state at a silicon/silicon oxide interface employing metal-oxide- silicon diodes 显示文摘	TERMAN L M	1962	Solid-State Electron1962，5，5：	1
6	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes显示文摘	Terman L M	1962	Solid-state Electronics1962，5，5：	1
7	An Investigation of Surface States at a Silicon/ Silicon Oxide Interface Employing Metal-Oxide-Silicon Diodes 显示文摘	Terman L M	1962	Solid-State Electronics1962，5，：	1
8	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes显示文摘	TERMAN L M	1962	Solid-State Electronics1962，5，5：	1
9	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes 显示文摘	TERMAN L M	1962	Solid-State Electron1962，5，5：	1
10	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide- silicon diodes 显示文摘	Terman L M	1962	Solid-state Electronics1962，5，5：	1
11	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes显示文摘	Terman L M	1962	Solid State Electronics1962，，5：	1
12	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes 显示文摘	Terman L M	1962	Solid-state Electronics1962，5，：	1
13	An Investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes显示文摘		1962	Solid-state Electron1962，5，：	1
14	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes显示文摘	Terman L M	1962	Solid-state Electron1962，5，5：	1
15	VEGF receptor subtypes KDR and Flt-1 show different sensitivities to heparin and placenta growth factor显示文摘	Terman B Khandke L Dougher Vermazan M	1994	Gowth Factor1994，11，8：	1
16	TrkB activation by brain-derived neurotrophic factor inhibits the G protein-gated inward rectifier Kir3 by tyrosine phosphorylation of the channel显示文摘	Rogalski S L Appleyard S M Pattillo A Terman G W Chavkin C	2000	J Biol Chem2000，275，25：	1
17	Nitrogen release from sulfur coated urea,as affected by coating weight,placement and temperature显示文摘	Allen S E Hunt C M Terman G L	1971	Agron J1971，63，：	1
18	Prevalence of sea- sonal affective disorder at four latitudes 显示文摘	Rosen L N Targum S D Terman M	1990	Psychiatry Re- search1990，31，2：	1
19	A two- stage weighted capacitor network for D/A-A/D conversion 显示文摘	YEE Y S TERMAN L M HELLER L G	1979	IEEE Trans Sol Sta Cire1979，14，4：	1
20	An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes显示文摘	TERMAN L M	1962	Sol Sta Elec1962，5，5：	1

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