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16篇 您的检索式:作者名="Taur A"
    题名 作者 年代 出处 被引量
1Staging accuracy in mycosis fungoides and sezary syndrome using integrated positron emission tomography and computed tomography显示文摘Tsai EY Taur A Espinosa L 2006Arch Dermatol2006,142,5:1
2Prospective randomized trial of the effect of octreotide on pancreatic juice output after pancreaticoduodenectomy in relation to histological diagnosis,duct size and leakage显示文摘Fernández-Cruz L Jiménez Chavarría E Taurà P et at 2013HPB (Oxford)2013,15,5:1
3Postoperative pain relief after,hepatic resection in cirrhotic patients:The efficacy of a single small dose of ketamine plus morphine epidurally显示文摘Taurá P Fuster J Blasi A 2003Anesth Analg2003,96,2:1
4Quantum-me chanical modeling of electron tunneling current from the in version layer of ultra-thin-oxide nMOSFET's 显示文摘LOS H BUCHANAN D A TAUR Y 1997IEEE Elec tron Device Letters1997,18,5:1
5Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's显示文摘Lo S-H Bushanan D A Taur Y 1997IEEE Elec Dev Lett1997,18,5:1
6Quantum-mechanical modeling-of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's 显示文摘LO S H BUCHANAN D A TAUR Y 1997IEEE Electron Device Letters1997,18,5:1
7Postoperative pain relief afterhepatic resection in cirrhotic patients:the efficacy of a single smalldose of ketamine plusmorphine epidurally显示文摘TauráP Fuster J Blasi A 2003Anesth Analg2003,96,2:1
8Pasteurization of bqne for tumour eradication prior to reimplantation - an in vitro & pre-clinical efficacy study显示文摘Kode J Taur P Gulia A 2014Indian J Med Res2014,139,4:1
9CMOS scaling into nanometer regime显示文摘Yuan Taur Douglas A Buchanan Wei Chen 1997Proceedings of the IEEE1997,85,4:1
10CMOS scaling into nanometer regime显示文摘 BUCHANAN D A CHEN W 1997Proc of IEEE1997,85,4:1
11Laparoscopic approach to pheochromocytoma:hemodynamic changes and catecholamine secretion显示文摘Fernández-Cruz L Taurá P Sáenz A 1996World Journal of Surgery1996,,07:1
12Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultrathin-oxide nMOSFET' s 显示文摘Lo S H Bushanan D A Taur Y 1997IEEE Elec Dev Lett1997,18,5:1
13Quantum-mechanical mode- ling of electron tunneling currcnt from the inversion layer of nltra- thin-oxide nMOSFET' s 显示文摘Lo S H Buchana D A Taur Y 1997IEEE Electron Device Letters1997,18,:1
14Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs 显示文摘Lo S H Buchanan D A Taur Y 1997IEEE Electron device Letters1997,18,:1
15Quantummechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFET' s 显示文摘LOS H BUCHANAN D A TAUR Y 1997IEEE Electron Device Lett1997,18,5:1
16CMOS scaling into the nanometer regime显示文摘Taur Y Buchanan D A Chen W 1997Proceedings of the IEEE1997,85,4:1
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