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		题名	作者	年代	出处	被引量
	1	Improvement of extraction efficiency for GaN-based light emitting diodes显示文摘A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demonstrated to be a promising method to be widely exploited in the manufacture of all kinds of LED devices.	SU YanKuin CHEN JianJhong KAO ChienChih TSAI ChunFu	2010	Science China(Technological Sciences)2010，53，2：	2

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