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		题名	作者	年代	出处	被引量
	1	Oxygen vacancy and Mn2+induced ferromagnetism in Mn-doped ZnO thin films显示文摘With the purpose of investigating the origin of ferromagnetism(FM), Mn-doped Zn O thin films had been fabricated by radio frequency(rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), and superconducting quantum interference device(SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mndoped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+on the ferromagnetic behavior, OVplays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.	GUAN SuJun NASU Naho ZHANG Yu TAMAMOTO Yuri YAMANOBE Maria ZHAO XinWei	2019	Science China(Technological Sciences)2019，62，10：	1

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