| 1 | Electronic structure of GaAs/A1GaAs quantum double rings in lateral electric field显示文摘A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field isinvestigated theoretically.The eigenvalue problem with the effective-mass approximation is solved bymeans of the finite-element method.The energy levels and wave functions of quantum-confined electronsand heavy holes are obtained and show an agreement with our previous theoretical and experimentalstudies.It is shown in the approximation of neglecting the Coulomb attraction between the electron andheavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an appliedelectric field of 0.7 kV/cm. | Y.Yao T.Ochiai T.Mano T.Kuroda T.Noda N.Koguchi K.Sakoda | 2009 | Chinese Optics Letters2009，7，10： | 1 |
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