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1篇 您的检索式：作者名="Subhranu Samanta"

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		题名	作者	年代	出处	被引量
	1	Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO_x/TiO_x/TiN Structure显示文摘The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/Cr Ox/Ti Ox/Ti N structure for the first time.Transmission electron microscope image confirmed a viahole size of 0.4 lm.A 3-nm-thick amorphous Ti Oxwith 4-nm-thick polycrystalline Cr Oxlayer was observed.A small 0.4-lm device shows reversible resistive switching at a current compliance of 300 l A as compared to other larger size devices(1–8 lm)owing to reduction of leakage current through the Ti Oxlayer.Good device-to-device uniformity with a yield of[85%has been clarified by weibull distribution owing to higher slope/shape factor.The switching mechanism is based on oxygen vacancy migration from the Cr Oxlayer and filament formation/rupture in the Ti Oxlayer.Long read pulse endurance of[105cycles,good data retention of 6 h,and a program/erase speed of 1 ls pulse width have been obtained.	Debanjan Jana Subhranu Samanta Sourav Roy Yu Feng Lin Siddheswar Maikap	2015	Nano-Micro Letters2015，7，4：	2

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